APT2X100D60J

2 3 2 3 2 1 4 3 1 4 1 4 Parallel Anti-Parallel SO 2 T- 27 APT2X100D60J APT2X101D60J "UL Recognized" APT2X101D60J APT2X100D60J 600V 100A 600V 100A ISOTOP ® file # E145592 DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS • Anti-Parallel Diode • • • • • -Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters Snubber Diode Uninterruptible Power Supply (UPS) Induction Heating High Speed Rectifiers PRODUCT FEATURES • Ultrafast Recovery Times • Soft Recovery Characteristics • Popular SOT-227 Package • Low Forward Voltage • High Blocking Voltage • Low Leakage Current PRODUCT BENEFITS • Low Losses • Low Noise Switching • Cooler Operation • Higher Reliability Systems • Increased System Power Density MAXIMUM RATINGS Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM TJ,TSTG TL Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage All Ratings: TC = 25°C unless otherwise specified. APT2X100_101D60J UNIT Volts 600 100 160 1000 -55 to 175 300 Maximum Average Forward Current (TC = 90°C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) Operating and StorageTemperature Range Lead Temperature for 10 Sec. Amps °C STATIC ELECTRICAL CHARACTERISTICS Symbol IF = 100A VF Forward Voltage IF = 200A IF = 100A, TJ = 125°C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V VR = 600V VR = 600V, TJ = 125°C MIN TYP MAX UNIT 1.6 1.7 1.4 2.0 Volts 250 500 170 Microsemi Website - http://www.microsemi.com 053-6007 Rev H pF 9-2009 μA DYNAMIC CHARACTERISTICS Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions MIN TYP 34 MAX UNIT ns nC Reverse Recovery Time I = 1A, di /dt = -100A/μs, V = 30V, T = 25°C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 100A, diF/dt = -1000A/μs VR = 400V, TC = 125°C IF = 100A, diF/dt = -200A/μs VR = 400V, TC = 125°C IF = 100A, diF/dt = -200A/μs VR = 400V, TC = 25°C - 180 390 5 220 1450 13 110 2550 40 - Amps ns nC Amps ns nC Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC RθJA WT Characteristic / Test Conditions Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance Package Weight MIN TYP MAX UNIT °C/W oz g .42 20 1.03 29.2 10 1.1 Torque Maximum Terminal & Mounting Torque lb•in N•m Microsemi Reserves the right to change, without notice, the specifications and information contained herein. 0.45 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 10-5 0.9 0.7 0.5 0.3 0.1 0.05 10-4 Note: PDM t1 t2 SINGLE PULSE 10-3 10-2 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC t 0.1 1 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 053-6007 Rev H 9-2009 TYPICAL PERFORMANCE CURVES 300 250 IF, FORWARD CURRENT (A) 200 150 100 50 0 TJ = 125°C trr, REVERSE RECOVERY TIME (ns) APT2X101_100D60J 250 200A 200 100A 50A T =125°C J V =400V R 150 TJ = 150°C TJ = 25°C TJ = -55°C 0 0.5 1 1.5 2 2.5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage 100 50 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/μs) Figure 3. Reverse Recovery Time vs. Current Rate of Change 50 IRRM, REVERSE RECOVERY CURRENT (A) T =125°C J V =400V R 0 0 200 3000 Qrr, REVERSE RECOVERY CHARGE (nC) T =125°C J V =400V 2500 2000 1500 R 200A 100A 200A 40 30 100A 50A 10 50A 1000 500 0 20 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/μs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 Qrr trr IRRM trr Qrr 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/μs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 160 140 120 IF(AV) (A) 100 80 60 40 20 Duty cycle = 0.5 T =150°C J 0 0 200 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/μs) 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 1600 CJ, JUNCTION CAPACITANCE (pF) 1400 1200 1000 800 0 100 125 150 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 0 25 50 75 400 200 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 0 .4 1 053-6007 Rev H 9-2009 600 APT2X101_100D60J Vr +18V 0V D.U.T. 30μH trr/Qrr Waveform diF /dt Adjust APT60M75L2LL PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 2 3 4 IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero 1 4 5 3 2 0.25 IRRM trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. 5 Figure 10, Diode Reverse Recovery Waveform and Definitions SOT-227 Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 H100 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 1.95 (.077) 2.14 (.084) Anti-parallel Parallel APT2X100D60J Anode 2 APT2X101D60J Anode 1 Cathode 1 Cathode 1 053-6007 Rev H 9-2009 Dimensions in Millimeters and (Inches) Cathode 2 Anode 1 Cathode 2 Anode 2 Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.