APT2X60DC60J

APT2X61DC60J APT2X60DC60J ISOTOP® SiC Diode Power Module 2 3 VRRM = 600V IF = 60A @ TC = 100°C Application • • • • Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers 2 3 1 4 Features Anti-Parallel Anti-Parallel APT2X60DC120J APT2X60DC60J 1 4 • Parallel Parallel AAPT2X61DC120J PT2X61DC60J 2 4 3 • • • Benefits SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF ISOTOP® Package (SOT-227) Very low stray inductance High level of integration 1 ISOTOP® • • • • • • Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Absolute maximum ratings (per leg) Symbol VR VRRM IF(AV) IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Current Duty cycle = 50% Non-Repetitive Forward Surge Current 10 µs Max ratings 600 TC = 100°C TC = 25°C 60 750 Unit V A APT2X61_60DC60J – Rev 0 February, 2009 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–3 APT2X61DC60J APT2X60DC60J All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics (per leg) Symbol Characteristic VF IRM QC C Diode Forward Voltage Maximum Reverse Leakage Current Total Capacitive Charge Total Capacitance Test Conditions Tj = 25°C IF = 60A Tj = 175°C Tj = 25°C VR = 600V Tj = 175°C IF = 60A, VR = 300V di/dt =1600A/µs f = 1MHz, VR = 200V f = 1MHz, VR = 400V Min Typ 1.6 2 300 600 84 390 300 Max 1.8 2.4 1200 6000 Unit V µA nC pF Thermal and package characteristics (per leg) Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt Characteristic Junction to Case Thermal resistance Junction to Ambient (Diode) RMS Isolation Voltage, any terminal to case t =1 min, I isol