APT2X61DC120J

APT2X61DC120J APT2X60DC120J ISOTOP® SiC Diode Power Module 2 3 VRRM = 1200V IF = 60A @ TC = 100°C 2 3 Application • Uninterruptible Power Supply (UPS) • Induction heating • Welding equipment • High speed rectifiers Features • SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • ISOTOP® Package (SOT-227) • Very low stray inductance • High level of integration Benefits • Outstanding performance at high frequency operation • Low losses • Low noise switching • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • RoHS Compliant 1 Anti-Parallel APT2X60DC120J 4 1 Parallel 4 APT2X61DC120J 2 4 3 1 ISOTOP® Absolute maximum ratings (per leg) Symbol VR VRRM IF(AV) IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Current Duty cycle = 50% Non-Repetitive Forward Surge Current 10 µs Max ratings 1200 TC = 100°C TC = 25°C 60 750 Unit V APT2X61_60DC120J – Rev 0 December, 2007 A These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–3 APT2X61DC120J APT2X60DC120J All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics (per leg) Symbol Characteristic VF IRM QC C Diode Forward Voltage Maximum Reverse Leakage Current Total Capacitive Charge Total Capacitance Test Conditions Tj = 25°C IF = 60A Tj = 175°C Tj = 25°C VR = 1200V Tj = 175°C IF = 60A, VR = 600V di/dt =3000A/µs f = 1MHz, VR = 200V f = 1MHz, VR = 400V Min Typ 1.6 2.3 192 336 240 576 414 Max 1.8 3.0 1200 6000 Unit V µA nC pF Thermal and package characteristics (per leg) Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt Characteristic Junction to Case Thermal resistance Junction to Ambient (IGBT & Diode) RMS Isolation Voltage, any terminal to case t =1 min, I isol