APT2x100DQ60J

2 3 2 3 2 1 4 3 1 4 1 4 Anti-Parallel APT2x100DQ60J Parallel APT2x101DQ60J ISOTOP ® SO 2 T- 27 "UL Recognized" file # E145592 APT2x101DQ60J APT2x100DQ60J 600V 100A 600V 100A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode -Motor Controllers -Converters • Snubber Diode PRODUCT FEATURES • Ultrafast Recovery Times • Soft Recovery Characteristics • Popular SOT-227 Package • Low Forward Voltage • High Blocking Voltage • Low Leakage Current • Avalanche Energy Rated PRODUCT BENEFITS • Low Losses • Low Noise Switching • Cooler Operation • Higher Reliability Systems • Increased System Power Density • Uninterruptible Power Supply (UPS) • Induction Heating • High Speed Rectifiers MAXIMUM RATINGS Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM EAVL TJ,TSTG Characteristic / Test Conditions Maximum D.C. Reverse Voltage All Ratings: TC = 25°C unless otherwise specified. APT2x101_100DQ60J UNIT Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward Current (TC = 82°C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) Avalanche Energy (1A, 40mH) Operating and StorageTemperature Range 600 Volts 100 146 1000 20 -55 to 175 mJ °C Amps STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions IF = 100A VF Forward Voltage IF = 200A IF = 100A, TJ = 125°C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V VR = 600V VR = 600V, TJ = 125°C MIN TYP MAX UNIT 1.6 2.05 1.28 2.2 Volts 25 500 190 µA pF Microsemi Website - http://www.microsemi.com 053-4208 Rev G 9-2009 DYNAMIC CHARACTERISTICS Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 100A, diF/dt = -1000A/µs VR = 400V, TC = 125°C IF = 100A, diF/dt = -200A/µs VR = 400V, TC = 125°C IF = 100A, diF/dt = -200A/µs VR = 400V, TC = 25°C Test Conditions IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C MIN - APT2x101_100DQ60J TYP 34 ns MAX UNIT - 160 290 5 220 1530 13 100 2890 44 nC Amps ns nC Amps ns nC Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions RθJC VIsolation WT Junction-to-Case Thermal Resistance RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) Package Weight MIN TYP MAX UNIT °C/W Volts .42 2500 1.03 29.2 oz g Torque Maximum Mounting Torque 10 1.1 lb•in N•m Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.45 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 10-5 0.9 0.7 0.5 0.3 0.1 0.05 10-4 Note: PDM t1 t2 SINGLE PULSE 10-3 10-2 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC t 0.1 1 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 053-4208 Rev G 9-2009 TYPICAL PERFORMANCE CURVES 300 300 trr, REVERSE RECOVERY TIME (ns) TJ = 25°C T =125°C J V =400V R APT2x101_100DQ60J 250 IF, FORWARD CURRENT (A) 250 200A 100A 50A 200 TJ = 175°C 150 TJ = 125°C 100 200 150 100 50 TJ = -55°C 0 0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage T =125°C J V =400V R 50 0 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 3. Reverse Recovery Time vs. Current Rate of Change 60 IRRM, REVERSE RECOVERY CURRENT (A) T =125°C J V =400V R 4000 Qrr, REVERSE RECOVERY CHARGE (nC) 3500 3000 2500 2000 50A 1500 1000 500 0 100A 200A 200A 50 40 100A 30 50A 20 10 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.4 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/µs) 1 0.6 0.5 0.4 0.2 0 Qrr trr IRRM Qrr trr IF(AV) (A) 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 180 160 140 120 100 80 60 40 20 Duty cycle = 0.5 T =175°C J 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 1400 1200 CJ, JUNCTION CAPACITANCE (pF) 1000 800 600 400 200 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 0 1 0 25 50 75 100 125 150 175 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 0 053-4208 Rev G 9-2009 APT2x101_100DQ60J Vr +18V 0V D.U.T. 30μH trr/Qrr Waveform diF /dt Adjust APT60M75L2LL PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 2 3 4 IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero 1 4 5 3 2 0.25 IRRM trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. 5 Figure 10, Diode Reverse Recovery Waveform and Definitions SOT-227 (ISOTOP®) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 H100 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 1.95 (.077) 2.14 (.084) Anti-parallel APT2x100DQ60J Parallel APT2x101DQ60J Anode 2 Cathode 1 Cathode 1 Anode 1 053-4208 Rev G 9-2009 38.0 (1.496) 38.2 (1.504) Dimensions in Millimeters and (Inches) Cathode 2 Anode 1 Cathode 2 Anode 2 Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.