APT30DQ120BG

1200V 30A APT30DQ120B APT30DQ120S APT30DQ120BG* APT30DQ120SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE (B) TO - 24 PRODUCT APPLICATIONS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode -Motor Controllers -Converters -Inverters • Snubber Diode • PFC PRODUCT FEATURES • Ultrafast Recovery Times • Soft Recovery Characteristics PRODUCT BENEFITS • Low Losses • Low Noise Switching 1 2 7 D3PAK • Cooler Operation • Popular TO-247 Package or Surface Mount D3PAK Package • Higher Reliability Systems • Low Forward Voltage • Low Leakage Current • Avalanche Energy Rated • Increased System Power Density 1 2 (S) 1 2 1 - Cathode 2 - Anode Back of Case - Cathode MAXIMUM RATINGS Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM EAVL TJ,TSTG TL Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage All Ratings: TC = 25°C unless otherwise specified. APT30DQ120B_S(G) UNIT 1200 Volts Maximum Average Forward Current (TC = 103°C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) Avalanche Energy (1A, 40mH) Operating and StorageTemperature Range Lead Temperature for 10 Sec. 30 43 210 20 -55 to 175 300 °C mJ Amps STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions IF = 30A VF Forward Voltage IF = 60A IF = 30A, TJ = 125°C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V VR = 1200V VR = 1200V, TJ = 125°C MIN TYP MAX UNIT 2.8 3.4 2.1 3.3 Volts 100 500 36 pF Microsemi Website - http://www.microsemi.com 053-4244 Rev B 7-2009 µA DYNAMIC CHARACTERISTICS Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 30A, diF/dt = -1000A/µs VR = 800V, TC = 125°C IF = 30A, diF/dt = -200A/µs VR = 800V, TC = 125°C IF = 30A, diF/dt = -200A/µs VR = 800V, TC = 25°C Test Conditions IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C MIN - APT30DQ120B_S(G) TYP MAX UNIT ns 26 320 545 4 435 2100 9 180 2975 28 nC Amps ns nC Amps ns nC Amps - THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC WT Characteristic / Test Conditions Junction-to-Case Thermal Resistance MIN TYP MAX UNIT °C/W oz g .80 0.22 Package Weight 5.9 10 lb•in N•m Torque Maximum Mounting Torque 1.1 Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.90 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.80 D = 0.9 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0 10 -5 0.7 0.5 Note: PDM t1 t2 0.3 SINGLE PULSE 0.1 0.05 10-4 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC t 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 053-4244 Rev B 7-2009 TYPICAL PERFORMANCE CURVES 200 trr, REVERSE RECOVERY TIME (ns) 180 IF, FORWARD CURRENT (A) 160 140 120 100 80 60 40 20 0 0 TJ = 125°C TJ = 25°C TJ = 175°C 600 T = 125°C J V = 800V R APT30DQ120B_S(G) 60A 500 400 30A 300 15A 200 TJ = -55°C 100 0 1 2 3 4 5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage 5000 Qrr, REVERSE RECOVERY CHARGE (nC) T = 125°C J V = 800V R 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 3. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 35 T = 125°C J V = 800V 60A 30 25 R 4000 60A 3000 30A 2000 15A 1000 30A 20 15 15A 10 5 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.2 trr trr 0.8 IRRM Qrr 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 50 45 40 35 IF(AV) (A) 30 25 20 Duty cycle = 0.5 T = 175°C J Kf, DYNAMIC PARAMETERS (Normalized to 1000A/µs) 1.0 0.6 0.4 Qrr 0.2 0.0 15 10 5 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 200 180 CJ, JUNCTION CAPACITANCE (pF) 160 140 120 100 80 60 40 20 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 0 1 0 75 100 125 150 175 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 0 25 50 053-4244 Rev B 7-2009 APT30DQ120B_S(G) Vr +18V 0V D.U.T. 30μH trr/Qrr Waveform diF /dt Adjust APT10035LLL PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 2 3 4 IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero 1 4 5 3 2 0.25 IRRM trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. 5 Figure 10, Diode Reverse Recovery Waveform and Definitions TO-247 Package Outline e1 SAC: Tin, Silver, Copper 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) D PAK Package Outline e3 100% Sn 4.90 (.193) 5.10 (.201) 1.45 (.057) 1.60 (.063) 15.85 (.624) 16.05(.632) 13.30 (.524) 13.60(.535) 3 Cathode (Heat Sink) 1.00 (.039) 1.15(.045) Cathode 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) 18.70 (.736) 19.10 (.752) 12.40 (.488) 12.70 (.500) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 0.40 (.016) 0.65 (.026) 0.020 (.001) 0.250 (.010) 2.70 (.106) 2.90 (.114) 19.81 (.780) 20.32 (.800) 1.15 (.045) 1.45 (.057) 1.20 (.047) 1.90 (.075) 1.40 (.055) 2.10 (.083) 5.45 (.215) BSC (2 Plcs.) 2.40 (.094) 2.70 (.106) (Base of Lead) 053-4244 Rev B 7-2009 Anode 2.21 (.087) 2.59 (.102) Heat Sink (Cathode) and Leads are Plated Cathode 10.90 (.430) BSC Dimensions in Millimeters and (Inches) Anode Cathode Dimensions in Millimeters (Inches) Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.