APT30DQ60BHBG

APT30DQ60BHB APT30DQ60BHB(G) 600V 2X30A *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE TO PRODUCT APPLICATIONS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode -Motor Controllers -Converters -Inverters • Snubber Diode • PFC • RoHS Compliant PRODUCT FEATURES • Ultrafast Recovery Times • Soft Recovery Characteristics PRODUCT BENEFITS • Low Losses • Low Noise Switching 1 2 3 -24 7 • Cooler Operation • Popular TO-247 Package or Surface Mount D3PAK Package • Higher Reliability Systems • Low Forward Voltage • Low Leakage Current • Avalanche Energy Rated • Increased System Power Density 1 3 2 1 - Cathode 1 2 - Anode 1 Cathode 2 3 - Anode 2 MAXIMUM RATINGS Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM EAVL TJ,TSTG TL Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage All Ratings per diode: TC = 25°C unless otherwise specified. APT30DQ60BHB(G) UNIT 600 Volts Maximum Average Forward Current (TC = 67°C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) Avalanche Energy (1A, 40mH) Operating and StorageTemperature Range Lead Temperature for 10 Sec. 30 51 320 20 -55 to 175 300 °C mJ Amps STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions IF = 30A VF Forward Voltage IF = 60A IF = 30A, TJ = 125°C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V VR = 600V VR = 600V, TJ = 125°C MIN TYP MAX UNIT 2.0 2.4 1.7 2.4 Volts 25 500 36 052-6321 Rev A pF 1-2009 μA DYNAMIC CHARACTERISTICS Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 30A, diF/dt = -1000A/μs VR = 400V, TC = 125°C IF = 30A, diF/dt = -200A/μs VR = 400V, TC = 125°C IF = 30A, diF/dt = -200A/μs VR = 400V, TC = 25°C Test Conditions IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C MIN - APT30DQ60BHB(G) TYP MAX UNIT ns nC 23 30 55 3 175 485 6 75 855 22 - - Amps ns nC Amps ns nC Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC WT Characteristic / Test Conditions Junction-to-Case Thermal Resistance MIN TYP MAX UNIT °C/W oz g 1.5 0.22 Package Weight 5.9 10 1.1 lb•in N•m Torque Maximum Mounting Torque Microsemi reserves the right to change, without notice, the specifications and information contained herein. 1.6 ZθJC, THERMAL IMPEDANCE (°C/W) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10-5 10-4 10-3 10-2 0.1 Note: PDM t1 t2 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC t 1 10 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION TJ (°C) 1-2009 0.481 Dissipated Power (Watts) TC (°C) 1.019 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. 052-6321 Rev A 0.0023 0.0531 FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL ZEXT TYPICAL PERFORMANCE CURVES 250 TJ= 125°C TJ= 150°C TJ= 25°C trr, COLLECTOR CURRENT (A) 200 IF, FORWARD CURRENT (A) TJ= 55°C 160 140 120 100 80 60 40 20 0 30A 15A 60A APT30DQ60BHB(G) T = 125°C J V = 400V R 150 100 50 0 0 1 2 3 4 5 6 7 8 Qrr, REVERSE RECOVERY CHARGE (nC) VF, ANODE-TO-CATHODE VOLTAGE (V) FIGURE 2, Forward Current vs. Forward Voltage 1400 T = 125°C J V = 400V R 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 3, Reverse Recovery Time vs. Current Rate of Change 25 IRRM, REVERSE RECOVERY CURRENT (A) T = 125°C J V = 400V R 60A 60A 30A 15A 1200 1000 800 600 400 200 0 20 30A 15 15A 10 5 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change 1.3 1.2 1.0 0.5 0.4 0.3 0.2 0 QRR tRR IRRM 0 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 5, Reverse Recovery Current vs. Current Rate of Change 60 50 40 IF(AV) (A) 30 20 10 Duty cycle = 0.5 TJ = 45°C Kf, DYNAMIC PARAMETERS (Normalized to 1000A/μs) 0 25 50 75 100 125 150 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) FIGURE 6, Dynamic Parameters vs Junction Temperature 200 CJ, JUNCTION CAPACITANCE (pF) Case Temperature (°C) FIGURE 7, Maximum Average Forward Current vs. Case Temperature 160 120 80 40 10 100 200 VR, REVERSE VOLTAGE (V) FIGURE 8, Junction Capacitance vs. Reverse Voltage 0 1 052-6321 Rev A 1-2009 Vr +18V 0V D.U.T. 30μH diF /dt Adjust APT30GT60BR APT30DQ60BHB(G) trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 2 3 4 IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero 1 4 5 3 2 0.25 IRRM trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. 5 Figure 10, Diode Reverse Recovery Waveform and Definitions TO-247 Package Outline e1 SAC: Tin, Silver, Copper 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 20.80 (.819) 21.46 (.845) 3.55 (.140) 3.81 (.150) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Anode 1 / Cathode 2 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Cathode 1 Anode 1 / Cathode 2 Anode 2 1-2009 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. 052-6321 Rev A Dimensions in Millimeters and (Inches) Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. 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