APT30DQ60K

600V 30A APT30DQ60K APT30DQ60KG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode -Motor Controllers -Converters -Inverters • Snubber Diode • PFC (K) PRODUCT FEATURES • Ultrafast Recovery Times • Soft Recovery Characteristics • Popular TO-220 Package • Low Forward Voltage • Low Leakage Current • Avalanche Energy Rated PRODUCT BENEFITS • Low Losses • Low Noise Switching • Cooler Operation • Higher Reliability Systems • Increased System Power Density 1 2 1 2 1 - Cathode 2 - Anode Back of Case - Cathode MAXIMUM RATINGS Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM EAVL TJ,TSTG TL Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage All Ratings: TC = 25°C unless otherwise specified. APT30DQ60K(G) UNIT 600 Volts Maximum Average Forward Current (TC = 117°C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) Avalanche Energy (1A, 40mH) Operating and StorageTemperature Range Lead Temperature for 10 Sec. 30 51 320 20 -55 to 175 300 °C mJ Amps STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions IF = 30A VF Forward Voltage IF = 60A IF = 30A, TJ = 125°C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V VR = 600V VR = 600V, TJ = 125°C MIN TYP MAX UNIT 2.0 2.4 1.7 2.4 Volts 25 500 36 μA pF 053-4215 Rev D 2-2010 Microsemi Website - http://www.microsemi.com DYNAMIC CHARACTERISTICS Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 30A, diF/dt = -1000A/μs VR = 400V, TC = 125°C IF = 30A, diF/dt = -200A/μs VR = 400V, TC = 125°C IF = 30A, diF/dt = -200A/μs VR = 400V, TC = 25°C Test Conditions IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C MIN TYP APT30DQ60K(G) MAX UNIT ns nC 23 30 55 3 175 485 6 75 855 22 - - Amps ns nC Amps ns nC Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol R JC WT Characteristic / Test Conditions Junction-to-Case Thermal Resistance MIN TYP MAX UNIT °C/W oz g .80 0.07 Package Weight 1.9 10 1.1 lb•in N•m Torque Maximum Mounting Torque Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.90 Z JC, THERMAL IMPEDANCE (°C/W) 0.80 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0 10-5 0.1 0.05 10-4 SINGLE PULSE 0.5 0.3 Note: D = 0.9 0.7 PDM t1 t2 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC t 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 053-4215 Rev D 2-2010 TYPICAL PERFORMANCE CURVES 100 200 trr, REVERSE RECOVERY TIME (ns) 180 160 140 120 100 80 60 40 20 60A APT30DQ60K(G) T = 125°C J V = 400V R IF, FORWARD CURRENT (A) 80 TJ = 175°C 60 TJ = 125°C 40 TJ = -55°C TJ = 25°C 0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage 1200 0 0 30A 15A 20 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/μs) Figure 3. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 25 T = 125°C J V = 400V R 0 Qrr, REVERSE RECOVERY CHARGE (nC) T = 125°C J V = 400V R 60A 1000 60A 800 30A 600 400 200 0 15A 20 30A 15 10 15A 5 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/μs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/μs) 1.0 trr 0.8 0.6 0.4 0.2 0.0 Qrr Qrr trr 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/μs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 60 50 40 IF(AV) (A) 30 20 10 0 Duty cycle = 0.5 T = 175°C J 0 IRRM 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 200 180 CJ, JUNCTION CAPACITANCE (pF) 160 140 120 100 80 0 75 100 125 150 175 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 25 50 40 20 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 0 1 053-4215 Rev D 2-2010 60 Vr +18V 0V D.U.T. 30μH diF /dt Adjust APT30GT60BR APT30DQ60K(G) trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 2 3 4 IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero 1 4 5 3 2 0.25 IRRM trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. 5 Figure 10, Diode Reverse Recovery Waveform and Definitions TO-220 (K) Package Outline e3 100% Sn 0.404 [10.26] 0.393 [9.98] Cathode 0.114 [2.90] 0.102 [2.59] ø0.153 [3.89] ø0.149 [3.78] 0.508 [12.90] 0.492 [12.50] 0.362 [9.19] 0.354 [8.99] 0.058 [1.47] 0.047 [1.19] 0.186 [4.72] 0.174 [4.42] 0.154 [3.91] 0.134 [3.40] 0.531 [13.49] 0.515 [13.08] 0.057 [1.45] 0.047 [1.19] 0.110 [2.79] 0.099 [2.51] Cathode Anode 053-4215 Rev D 2-2010 0.100 [2.54] TYP 0.204 [5.18] 0.196 [4.98] 0.034 [0.86] 0.030 [0.76] 0.018 [0.46] 0.014 [0.36] Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.