APT30GF60JCU2

APT30GF60JCU2 ISOTOP® Boost chopper NPT IGBT SiC chopper diode K VCES = 600V IC = 30A @ Tc = 90°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch C Features • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Low leakage current - RBSOA and SCSOA rated G E • Chopper SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF ISOTOP® Package (SOT-227) Very low stray inductance High level of integration E C K • • • G ISOTOP® Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant Max ratings 600 45 30 100 ±20 154 60A@500V Unit V A V W APT30GF60JCU2 – Rev 0 September, 2009 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 90°C TC = 25°C TC = 25°C Tj = 125°C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APT30GF60JCU2 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(on) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V VCE = 600V Tj = 25°C Tj = 125°C Tj = 25°C VGE =15V IC = 30A Tj = 125°C VGE = VCE, IC = 1mA VGE = 20V, VCE = 0V Min Typ Max 250 500 2.45 6 400 Unit µA V V nA 1.7 4 2.0 2.2 Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC =30A Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 30A RG = 6.8Ω Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 30A RG = 6.8Ω VGE = 15V Tj = 125°C VBus = 400V IC = 30A Tj = 125°C RG = 6.8Ω VGE ≤15V ; VBus = 360V tp ≤ 10µs ; Tj = 125°C Test Conditions VR=600V Tj = 25°C Tj = 175°C Tc = 125°C Min Typ 1350 193 120 99 10 60 30 12 80 15 32 12 90 21 0.2 Max Unit pF nC ns ns mJ 0.8 135 A Chopper SiC diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC C Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance IF = 10A Min 600 Typ 50 100 10 1.6 2 14 65 50 Max 200 2000 1.8 2.4 Unit V µA APT30GF60JCU2 – Rev 0 September, 2009 A V nC pF Tj = 25°C Tj = 175°C IF = 10A, VR = 300V di/dt =500A/µs f = 1MHz, VR = 200V f = 1MHz, VR = 400V www.microsemi.com 2–6 APT30GF60JCU2 Thermal and package characteristics Symbol Characteristic RthJC RthJA VISOL TJ,TSTG TL Torque Wt Junction to Case Thermal Resistance Junction to Ambient (IGBT & Diode) RMS Isolation Voltage, any terminal to case t =1 min, I isol