APT30GP60B2DL

APT30GP60B2DL(G) APT30GP60LDL(G) 600V, 30A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT® The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. Features • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff • Low forward Diode Voltage (VF) • Ultrasoft Recovery Diode • SSOA Rated • RoHS Compliant Typical Applications • Induction Heating • Welding • Medical • High Power Telecom • Resonant Mode Phase Shifted Bridge G C E G C E C G E MAXIMUM RATINGS Symbol VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 All Ratings: TC = 25°C unless otherwise specified. Ratings UNIT 600 ±20 ±30 100 49 120 120A @ 600V 463 -55 to 150 300 Watts °C Amps Volts @ TC = 25°C Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES VGE(TH) VCE(ON) I CES I GES Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX UNIT 600 3 4.5 2.2 2.1 275 2 6 2.7 Volts Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com 052-6355 Rev B Gate-Emitter Leakage Current (VGE = ±20V) ±100 nA 6-2009 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2750 μA DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT30GP60B2DL_LDL(G) Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 300V I C = 30A TJ = 150°C, R G = 5Ω, VGE = 15V, L = 100μH,VCE = 600V Inductive Switching (25°C) VCC(Peak) = 400V VGE = 15V I C = 30A 4 5 MIN TYP MAX UNIT pF V nC 3200 295 20 7.5 90 20 30 120 13 18 55 46 260 335 250 330 13 18 84 80 260 508 518 750 μJ ns ns A Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching SOA Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy 4 5 RG = 5Ω TJ = +25°C Turn-on Switching Energy (Diode) 6 μJ Inductive Switching (125°C) VCC(Peak) = 400V VGE = 15V I C = 30A RG = 5Ω TJ = +125°C Turn-on Switching Energy (Diode) 6 THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC RθJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT °C/W gm .27 .88 5.90 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) Microsemi reserves the right to change, without notice, the specifications and information contained herein. 6-2009 052-6355 Rev B TYPICAL PREFORMANCE CURVES 60 50 40 30 20 TC=25°C 10 0 TC=125°C VGE = 15V. 250 μs PULSE TEST