APT30GS60BRDL

APT30GS60BRDL(G) 600V, 30A, VCE(ON) = 2.8V Typical Resonant Mode Combi IGBT® The Thunderbolt HS™ IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET performance but lower cost. An extremely tight parameter distribution combined with a positive VCE(ON) temperature coefficient make it easy to parallel Thunderbolts HS™ IGBT's. Controlled slew rates result in very good noise and oscillation immunity and low EMI. The short circuit duration rating of 10μs make these IGBT's suitable for motor drive and inverter applications. Reliability is further enhanced by avalanche energy ruggedness. Combi versions are packaged with a high speed, soft recovery DL series diode. G C TO -24 7 Single die IGBT with separate DL C E G E Features • Fast Switching with low EMI • Very Low EOFF for Maximum Efficiency • Short circuit rated • Low Gate Charge • RoHS Compliant • Tight parameter distribution • Easy paralleling • Low Forward Diode Voltage (VF) • Ultrasoft Recovery Diode Typical Applications • ZVS Phase Shifted Bridge • Resonant Mode Switching • Phase Shifted Bridge • Welding • Induction heating • High Frequency SMPS Absolute Maximum Ratings Symbol I C1 I C2 I CM VGE SSOA tSC Parameter Continuous Collector Current TC = @ 25°C Continuous Collector Current TC = @ 100°C Pulsed Collector Current 1 Gate-Emitter Voltage Switching Safe Operating Area Short Circut Withstand Time 3 Rating 54 30 113 ±30V 113 10 µs V A Unit Thermal and Mechanical Characteristics Symbol PD RθJC RθCS TJ, TSTG TL WT Parameter Total Power Dissipation TC = @ 25°C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) Package Weight IGBT Diode -55 0.11 0.22 5.9 Min Typ Max 250 0.50 1.0 150 300 °C oz g 11-2008 052-6353 Rev B Unit W °C/W CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should be Followed. Microsemi Website - http://www.microsemi.com Static Characteristics Symbol VBR(CES) ΔVBR(CES)/ΔTJ TJ = 25°C unless otherwise specified Test Conditions VGE = 0V, IC = 250µA Reference to 25°C, IC = 250µA APT30GS60BRDL(G) Min 600 3 Typ 0.60 2.8 3.25 4 6.7 Max 3.15 5 50 1000 ±100 mV/°C µA nA V Unit V V/°C Parameter Collector-Emitter Breakdown Voltage Breakdown Voltage Temperature Coeff VCE(ON) VGE(th) ΔVGE(th)/ΔTJ ICES IGES Collector-Emitter On Voltage 4 Gate-Emitter Threshold Voltage Threshold Voltage Temp Coeff Zero Gate Voltage Collector Current Gate-Emitter Leakage Current VGE = 15V IC = 30A TJ = 25°C TJ = 125°C VGE = VCE, IC = 1mA VCE = 600V, VGE = 0V TJ = 25°C TJ = 125°C VGE = ±20V Dynamic Characteristics Symbol gfs Cies Coes Cres Co(cr) Co(er) Qg Qge Ggc td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Parameter TJ = 25°C unless otherwise specified Test Conditions VCE = 50V, IC = 30A VGE = 0V, VCE = 25V f = 1MHz Min VGE = 0V VCE = 0 to 400V Typ 18 1600 140 90 130 95 VGE = 0 to 15V IC = 30A, VCE = 300V Inductive Switching IGBT and Diode: 8 9 10 Max - Unit S Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Transfer Capacitance Charge Related 5 Reverse Transfer Capacitance Current Related 6 Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-On Switching Energy Turn-Off Switching Energy Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-On Switching Energy 8 9 pF - 145 12 65 16 29 360 27 TBD 800 570 16 29 390 22 TBD 1185 695 µJ ns µJ ns nC - TJ = 25°C, VCC = 400V, IC = 30A RG = 9.1Ω 7, VGG = 15V Inductive Switching IGBT and Diode: TJ = 125°C, VCC = 400V, IC = 30A RG = 9.1Ω 7, VGG = 15V - Turn-Off Switching Energy 10 052-6353 Rev B 11-2008 TYPICAL PERFORMANCE CURVES 120 VGE = 15V APT30GS60BRDL(G) 120 T = 125°C J IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 100 100 VGE = 13 & 15V 12V 80 TJ = 25°C 80 11V 60 60 10V 9V 8V 40 TJ = 125°C 40 20 TJ = 150°C 20 0 6V 0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics 0 0 1 2 3 4 5 6 7 8 VCE(ON), COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics 250µs PULSE TEST