APT30GT60BRDL

TYPICAL PERFORMANCE CURVES APT30GT60BRDL(G) 600V APT30GT60BRDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode Combi IGBT® The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. Features • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff • Low forward Diode Voltage (VF) • Ultrasoft Recovery Diode • SSOA Rated • RoHS Compliant Typical Applications • Induction Heating • Welding • Medical • High Power Telecom • Resonant Mode Phase Shifted Bridge G E G TO -24 7 C E C MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 All Ratings: TC = 25°C unless otherwise specified. APT30GT60BRDL(G) UNIT Volts 600 ±30 64 30 110 110A @ 600V 250 -55 to 150 300 °C Watts Amps Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA) Gate Threshold Voltage (VCE = VGE, I C = 700µA, Tj = 25°C) MIN TYP MAX Units 600 3 1.6 4 2.0 2.8 50 2 5 2.5 Volts Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 125°C) I CES I GES Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 µA nA 11-2008 052-6360 Rev B Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V) 1250 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT30GT60BRDL(G) Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 300V I C = 30A TJ = 150°C, R G = 10Ω, VGE = 15V, L = 100µH,VCE = 600V Inductive Switching (25°C) VCC = 400V VGE = 15V I C = 30A 4 5 MIN TYP MAX UNIT 1600 155 90 7.5 145 10 60 110 12 20 225 80 525 605 600 12 20 245 100 570 965 830 µJ ns ns A nC V pF Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy RG = 10Ω TJ = +25°C Turn-on Switching Energy (Diode) Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 44 6 µJ Inductive Switching (125°C) VCC = 400V VGE = 15V I C = 30A RG = 10Ω 55 Turn-on Switching Energy (Diode) Turn-off Switching Energy 6 TJ = +125°C THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC RθJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT °C/W gm .50 1.0 5.9 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 11-2008 Rev B 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) Microsemi Reserves the right to change, without notice, the specifications and information contained herein. 052-6360 TYPICAL PERFORMANCE CURVES 100 V GE APT30GT60BRDL(G) 140 15 &13V IC, COLLECTOR CURRENT (A) 120 11V 100 10V 80 60 40 20 0 9V 8V 7V 6V 0 5 10 15 20 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) = 15V 90 IC, COLLECTOR CURRENT (A) 80 70 60 50 40 30 20 10 0 TJ = -55°C TJ = 25°C TJ = 125°C 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 250µs PULSE TEST