APT32F120J_09

APT32F120J 1200V, 33A, 0.32Ω Max, trr ≤430ns N-Channel FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent niose immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. S G D S SO 2 T- 27 "UL Recognized" ISOTOP ® file # E145592 APT32F120J Single die FREDFET G D S FEATURES • Fast switching with low EMI • Low trr for high reliability • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant TYPICAL APPLICATIONS • ZVS phase shifted and other full full bridge • Half bridge • PFC and other boost converter • Buck converter • Single and two switch forward • Flyback Absolute Maximum Ratings Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive 1 Ratings 33 21 195 ±30 2700 25 Unit A V mJ A Thermal and Mechanical Characteristics Symbol PD RθJC RθCS TJ,TSTG VIsolation WT Characteristic Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range RMS Voltage (50-60hHz Sinusoidal Wavefomr from Terminals to Mounting Base for 1 Min.) Package Weight -55 2500 1.03 29.2 Torque 10 Terminals and Mounting Screws. 1.1 Microsemi Website - http://www.microsemi.com Min Typ Max 960 0.13 Unit W °C/W °C V oz g in·lbf N·m 04-2009 050-8090 Rev C 0.11 150 Static Characteristics Symbol VBR(DSS) ΔVBR(DSS)/ΔTJ RDS(on) VGS(th) ΔVGS(th)/ΔTJ IDSS IGSS TJ = 25°C unless otherwise specified Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 250µA VGS = 10V, ID = 25A VGS = VDS, ID = 2.5mA VDS = 1200V VGS = 0V TJ = 25°C TJ = 125°C APT32F120J Typ 1.41 0.27 4 -10 Max Unit V V/°C Ω V mV/°C µA nA Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance 3 Min 1200 Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current 2.5 0.32 5 250 1000 ±100 VGS = ±30V Dynamic Characteristics Symbol gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf 4 TJ = 25°C unless otherwise specified Test Conditions VDS = 50V, ID = 25A VGS = 0V, VDS = 25V f = 1MHz Parameter Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related Min Typ 58 18200 215 1340 520 Max Unit S pF VGS = 0V, VDS = 0V to 800V 5 Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time VGS = 0 to 10V, ID = 25A, VDS = 600V Resistive Switching VDD = 800V, ID = 25A RG = 2.2Ω 6 , VGG = 15V 270 560 90 265 100 60 315 90 nC ns Source-Drain Diode Characteristics Symbol IS ISM VSD trr Qrr Irrm dv/dt Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dt Test Conditions MOSFET symbol showing the integral reverse p-n junction diode (body diode) Min D Typ Max 33 Unit G S A 195 1.1 546 960 V ns µC A 25 V/ns ISD = 25A, TJ = 25°C, VGS = 0V TJ = 25°C TJ = 125°C ISD = 25A 3 diSD/dt = 100A/µs TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C ISD ≤ 25A, di/dt ≤1000A/µs, VDD = 100V, TJ = 125°C 402 703 2.8 9 14 24 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 8.64mH, RG = 25Ω, IAS = 25A. 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 04-2009 Rev C 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -8.27E-7/VDS^2 + 1.01E-7/VDS + 1.43E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. 050-8090 APT32F120J 140 V GS 45 = 10V T = 125°C J 120 ID, DRAIN CURRENT (A) 100 TJ = -55°C 40 V ID, DRIAN CURRENT (A) 35 30 25 GS = 6, 7, 8 & 9V 80 60 TJ = 25°C 5V 20 15 10 4.5V 40 20 0 TJ = 125°C TJ = 150°C 5 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics 160 VDS> ID(ON) x RDS(ON) MAX. 0 5 10 15 20 25 30 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) Figure 1, Output Characteristics RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 3.0 NORMALIZED TO VGS = 10V @ 25A 2.5 ID, DRAIN CURRENT (A) 140 120 100 250µSEC. PULSE TEST @