APT34N80B2C3

APT34N80B2C3 APT34N80LC3 800V 34A 0.145Ω Super Junction MOSFET C OLMOS O Power Semiconductors T-MAX™ TO-264 • Ultra low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Popular T-MAX™ or TO-264 Package Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. D G S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL dv/ dt All Ratings: TC = 25°C unless otherwise specified. APT34N80B2C3_LC3 UNIT Volts Amps Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 800 34 102 ±20 ±30 417 3.33 -55 to 150 300 50 17 0.5 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 640V, ID = 34A, TJ = 125°C) Repetitive Avalanche Current Repetitive Avalanche Energy 7 7 Volts Watts W/°C °C V/ns Amps mJ IAR EAR EAS Single Pulse Avalanche Energy 670 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 500µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 800 0.125 1.0 0.145 50 500 ±200 2.10 3 3.9 (VGS = 10V, ID = 22A) Ohms µA nA Volts Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TJ = 150°C) Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com "COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG" 050-7147 Rev F 6-2006 DYNAMIC CHARACTERISTICS Symbol C iss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT34N80B2C3 _LC3 Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 400V ID = 34A @ 25°C RESISTIVE SWITCHING VGS = 10V VDD = 400V ID = 34A @ 125°C RG = 2.5Ω 6 INDUCTIVE SWITCHING @ 25°C VDD = 533V, VGS = 15V ID = 34A, RG = 5Ω 6 INDUCTIVE SWITCHING @ 125°C VDD = 533V, VGS = 15V ID = 34A, RG = 5Ω MIN TYP MAX UNIT 4510 2050 110 180 22 90 25 15 70 6 675 580 1145 670 MIN TYP MAX UNIT Amps Volts ns µC pF 355 nC Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy 80 9 ns µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr dv/ dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 2 34 102 1 855 30 6 MIN TYP MAX (Body Diode) (VGS = 0V, IS = -34A) 1.2 Reverse Recovery Time (IS = -34A, dl S /dt = 100A/µs, VR = 400V) Reverse Recovery Charge (IS = -34A, dl S /dt = 100A/µs, VR = 400V) Peak Diode Recovery dv/ dt 5 V/ns THERMAL CHARACTERISTICS Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient UNIT °C/W .30 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.35 Z JC, THERMAL IMPEDANCE (°C/W) θ 4 Starting Tj = +25°C, L = 115.92mH, RG = 25Ω, Peak IL = 3.4A 5 IS = -34A di/dt = 100A/µs VR = 480V TJ = 125°C 6 Eon includes diode reverse recovery. See figures 18, 20. 7 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f 0.30 0.9 0.25 0.7 0.20 0.15 0.10 0.05 0 0.5 Note: PDM 6-2006 0.3 t1 t2 050-7147 Rev F 0.1 0.05 10-5 10-4 SINGLE PULSE Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t2 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves ID, DRAIN CURRENT (AMPERES) 50 APT34N80B2C3 _LC3 VGS =15 & 10V 6.5V 6V 5.5V 40 TJ ( C) 0.117 Dissipated Power (Watts) 0.00828 0.174 TC ( C) 0.183 30 5V ZEXT 20 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. 10 4.5V 4V FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 2 4 6 8 10 12 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 1.30 1.20 VGS=10V 1.10 1.00 0.90 0.80 NORMALIZED TO V = 10V @ 17A GS 0 100 90 ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @