APT35GA90S

APT35GA90B APT35GA90S 900V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT35GA90B poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. ® APT35GA90S D3PAK Single die IGBT FEATURES • Fast switching with low EMI • Very Low Eoff for maximum efficiency • Ultra low Cres for improved noise immunity • Low conduction loss • Low gate charge • Increased intrinsic gate resistance for low EMI • RoHS compliant TYPICAL APPLICATIONS • ZVS phase shifted and other full bridge • Half bridge • High power PFC boost • Welding • UPS, solar, and other inverters • High frequency, high efficiency industrial Absolute Maximum Ratings Symbol Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG TJ Parameter Collector Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current Gate-Emitter Voltage 2 1 Ratings 900 63 35 105 ±30 290 105A @ 900V -55 to 150 300 Unit V A V W Total Power Dissipation @ TC = 25°C Switching Safe Operating Area @ TJ = 150°C Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" from Case for 10 Seconds °C Static Characteristics Symbol VBR(CES) VCE(on) VGE(th) ICES IGES TJ = 25°C unless otherwise specified Test Conditions VGE = 0V, IC = 1.0mA VGE = 15V, IC = 18A VCE = 900V, VGE = 0V TJ = 25°C TJ = 125°C 3 TJ = 25°C TJ = 125°C Parameter Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Min 900 Typ 2.5 2.2 4.5 Max 3.1 6 250 1000 ±100 Unit V VGE =VCE , IC = 1mA μA nA 052-6332 Rev C 6 - 2009 VGS = ±30V Thermal and Mechanical Characteristics Symbol RθJC WT Torque Characteristic Junction to Case Thermal Resistance Package Weight Mounting Torque (TO-247 Package), 4-40 or M3 screw Min - Typ 5.9 Max 0.43 10 Unit °C/W g in·lbf Microsemi Website - http://www.microsemi.com Dynamic Characteristics Symbol Cies Coes Cres Qg3 Qge Qgc SSOA td(on) tr td(off) tf Eon2 Eoff6 td(on tr td(off) tf Eon2 Eoff6 TJ = 25°C unless otherwise specified Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 450V IC = 18A TJ = 150°C, RG = 10Ω4, VGE = 15V, L= 100uH, VCE = 900V Inductive Switching (25°C) VCC = 600V VGE = 15V IC = 18A RG = 10Ω4 TJ = +25°C Inductive Switching (125°C) VCC = 600V VGE = 15V IC = 18A RG = 10Ω4 TJ = +125°C 105 12 15 104 86 642 382 11 14 154 144 1044 907 APT35GA90B_S Min Typ 1934 173 28 84 14 34 A nC pF Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Max Unit ns μJ ns μJ 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 052-6332 Rev C 6 - 2009 Typical Performance Curves 60 50 40 30 20 10 0 V GE APT35GA90B_S 250 15V 13V IC, COLLECTOR CURRENT (A) 200 11V 10V 100 9V 8V 50 7V 6V 0 4 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25°C) I = 18A C T = 25°C J = 15V TJ= 125°C TJ= 55°C TJ= 25°C TJ= 150°C IC, COLLECTOR CURRENT (A) 150 0 1 2 3 4 5 6 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25°C) VGE, GATE-TO-EMITTER VOLTAGE (V) 250 μs PULSE TEST