APT35GT120JU2

APT35GT120JU2 ISOTOP® Boost chopper Trench + Field Stop IGBT® VCES = 1200V IC = 35A @ Tc = 80°C K C Applicatio n • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • ISOTOP® Package (SOT-227) • Very low stray inductance • High level of integration Benefits • Low conduction losses • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC o f VCEsat • RoHS Compliant G E E G C K ISOTOP Absolute maximum ratings Symbol VCES IC1 IC2 ICM VGE PD IFA V IFRMS Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Maximum Average Forward Current Duty cycle=0.5 RMS Forward Current (Square wave, 50% duty) TC = 25°C TC = 80°C TC = 25°C TC = 25°C TC = 80°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. www.microsemi.com 1-7 APT35GT120JU2 – Rev 1 27 34 A June, 2006 Max ratings 1200 55 35 80 ±20 260 Unit V A V W APT35GT120JU2 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) VGE(th) IGES Collector Emitter saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0 V, VCE = 1200V Tj = 25°C VGE =15V IC = 35A Tj = 125°C VGE = VCE, IC = 3 mA VGE = ±20V, VCE = 0 V Min 1.4 5.0 Typ 1.7 2.0 Max 5 2.1 6.5 500 Unit mA V V nA Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0 V VCE = 25V f = 1MHz Resistive Switching (25°C) VGE = 15V VBus = 600V IC = 35A R G = 27Ω Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 35A R G = 27Ω Min Typ 2530 132 115 85 30 420 62 90 45 520 90 5.8 4.6 Max Unit pF ns ns mJ www.microsemi.com 2-7 APT35GT120JU2 – Rev 1 June, 2006 APT35GT120JU2 Chopper diode ratings and characteristics Symbol VF IRM CT trr Reverse Recovery Time IRRM Qrr trr Qrr IRRM Maximum Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 30A VR = 800V di/dt =1000A/µs IF = 30A VR = 800V di/dt =200A/µs Characteristic Diode Forward Voltage Maximum Reverse Leakage Current Junction Capacitance Reverse Recovery Time Test Conditions IF = 30A IF = 60A IF = 30A VR = 1200V VR = 1200V VR = 200V IF=1A,VR=30V di/dt =100A/µs Min Typ 2.0 2.3 1.8 32 Tj = 25°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C 31 370 500 5 12 660 3450 220 4650 37 ns Max 2.5 250 500 Unit V µA pF Tj = 125°C Tj = 25°C Tj = 125°C A nC ns nC A Thermal and package characteristics Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt Characteristic Junction to Case Thermal Resistance Junction to Ambient (IGBT & Diode) RMS Isolation Voltage, any terminal to case t =1 min, I isol