APT35SM70B

PRELIMINARY APT35SM70B 9$Pȍ Package APT35SM70B Silicon Carbide N-Channel Power MOSFET TO -24 7 DESCRIPTION Silicon carbide (SiC) power MOSFET product line from Microsemi increase your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage applications. D G S FEATURES / TYPICAL APPLICATIONS SiC MOSFET Features: 6L&026)(7%HQH¿WV Applications: • Low on-resistance virtually independent on the ambient temperature ‡ +LJKHႈFLHQF\WRHQDEOHOLJKWHUFRPSDFW system • PV inverter, converter and industrial motor drives • Low capacitances and low gate charge • Simple to drive and easy to parallel • Smart grid transmission & distribution • Fast switching speed due to low internal gate resistance (ESR) • Improved thermal capabilities and lower switching losses • Induction heating, and welding • Stable operation at high junction temperature, Tj(max) = +175C • Eliminates the need of external Free Wheeling Diode • Power supply and distribution • Fast and reliable body diode • Lower system cost of ownership • H/EV powertrain and EV charger • Superior avalanche ruggedness MAXIMUM RATINGS Symbol Ratings Unit Drain Source Voltage 700 V Continuous Drain Current @ TC = 25°C 35 Continuous Drain Current @ TC = 100°C 25 IDM Pulsed Drain Current 80 VGS Gate-Source Voltage VDSS ID PD Parameter 1 A -10 to +25 V Total Power Dissipation @ TC = 25°C 176 W Linear Derating Factor 1.18 W/°C THERMAL AND MECHANICAL CHARACTERISTICS Symbol RșJC Characteristic Min Junction to Case Thermal Resistance Typ Max Unit 0.75 0.85 °C/W Operating Junction Temperature -55 175 Tstg Storage Junction Temperature Range -55 150 TL Soldering Temperature for 10 Seconds (1.6mm from case) Tj Torque 050-7730 Rev A 10/2016 Mounting Torque (TO-247 Package), 6-32 or M3 screw °C 260 10 in·lbf 1.1 N·m 1 PRELIMINARY APT35SM70B STATIC CHARACTERISTICS Symbol Parameter Test Conditions Min V(BR)DSS Drain-Source Breakdown Voltage VGS = 0V, ID = 1mA 700 RDS(on) Drain-Source On Resistance 2 VGS = 20V, ID = 10A VGS(th) Gate-Source Threshold Voltage ¨9GS(th)¨7J 7KUHVKROG9ROWDJH7HPSHUDWXUH&RHႈFLHQW VGS = VDS, ID = 1mA VDS = 700V VGS = 0V Typ 145 V -5.5 mV/°C 100 TJ = 150°C 250 Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current VGS = +20V / -10V ESR Equivalent Series Resistance f = 1MHz, 25mV, Drain Short PŸ 2.5 TJ = 25°C IDSS Unit V 125 1.7 Max ±100 2.2 μA nA Ÿ TJ ƒ&XQOHVVRWKHUZLVHVSHFL¿HG DYNAMIC CHARACTERISTICS Symbol Parameter Test Conditions Min Typ Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Qg Total Gate Charge VGS = 0/20V VDD= 466V 11 ID = 10A 19 127 67 Gate-Source Charge Gate-Drain Charge td(on) Turn-On Delay Time VDD = 466V 8 Current Rise Time VGS = 0/20V 4 ID = 10A 24 7XUQ2ႇ'HOD\7LPH tf Current Fall Time RG ȍ3 Turn-On Switching Energy 4 ERႇ 7XUQ2ႇ6ZLWFKLQJ(QHUJ\ td(on) Turn-On Delay Time VDD = 466V 7 Current Rise Time VGS = 0/20V 4 ID = 10A 27 tGRႇ 7XUQ2ႇ'HOD\7LPH tf Current Fall Time Eon2 Turn-On Switching Energy 4 ERႇ 7XUQ2ႇ6ZLWFKLQJ(QHUJ\ nC ns 18 L = 115 μH Eon2 tr pF 26 f = 1MHz Qgs tGRႇ Unit 1035 VGS = 0V, VDD = 700V Qgd tr Max 71 Tc = 25°C μJ 23 Freewheeling Diode = APT10SCE65B RG ȍ3 ns 19 L = 115 μH 67 Tc = 150°C μJ 28 Freewheeling Diode = APT10SCE65B Source-Drain Diode Characteristics Symbol Parameter VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Irrm Reverse Recovery Current Test Conditions ISD = 10A, VGS = 0V ISD = 10A, VDD = 466V dI/dt = -1000A/μs Min Typ Max Unit 4.25 V 35 ns 115 nC 6.6 A TJ ƒ&XQOHVVRWKHUZLVHVSHFL¿HG 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature 2 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 3 RG is total gate resistance including internal gate driver impedance. 4 Eon2 includes energy of APT10SCE65B free wheeling diode. 050-7730 Rev A 10/2016 2 PRELIMINARY APT35SM70B 50 70 V J TJ= 125°C 40 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 60 50 18V T = 25°C = 20V GS TJ= 150°C TJ= 75°C 40 TJ= 175°C 30 TJ= 25°C 20 16V 20V 30 14V 20 12V 10 10V 10 8V 0 0 2 4 6 8 0 10 0 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 1, Output Characteristics 50 20 10V 10 8V 12V 20 10V 10 8V 0 0 3 6 9 12 15 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 4, Output Characteristics NORMALIZED TO VGS = 20V @ 10A 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 í í 0 2 0 7 100    IGS= 1mA IDS= 10A VDS= 466V QGD 15 QGS 400 VDS 300 VGS 10 200 5 100 QG 0 0 0 10 20 30 40 50 60 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 20 2 1.8 J 30 3 6 9 12 15 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 3, Output Characteristics TJ, JUNCTION TEMPERATURE (°C) Figure 5, RDS(on) vs Junction Temperature 050-7730 Rev A 10/2016 ID, DRAIN CURRENT (A) 12V 30 T = 175°C 14V 18V 40 VGS, GATE-TO-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) RDS(on), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED TO 25°C) J 18V 0 16V 20V T = 150°C 14V 40 0 50 16V 20V 3 6 9 12 15 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics 70 QG, GATE CHARGE (nC) Figure 6, Gate Charge Characteristics 3 PRELIMINARY APT35SM70B 60 ID ,CONTINUOUS DRAIN CURRENT A) 10000 C, CAPACITANCE (pF) Ciss 1000 Coss 100 Crss f = 1MHz VGS = 0V 50 40 TJ= 25°C 10 0 0 2 4 6 8 10 12 14 16 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 8, Output Characteristics ID vs VGS Temperature  J í IDS, REVERSE DRAIN CURRENT (A) IDS, REVERSE DRAIN CURRENT (A) T = 25°C -5 VGS -4 VGS í -3 VGS -2 VGS í -1 VGS í 0 VGS í í -5 VGS -4 VGS í -3 VGS -2 VGS í -1 VGS í 0 VGS í 1.1 J -5 VGS í -4 VGS í -3 VGS í -2 VGS í -1 VGS 0 VGS í í í í í í í  VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 11, Reverse Drain Current vs Drain-to-Source Voltage Third Quadrant Conduction I = 1mA D (NORMALIZED TO 25°C) V(BR)DSS, BREAKDOWN VOLTAGE (V) T = 150°C í J í í í í í í í í í  VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Reverse Drain Current vs Drain-to-Source Voltage Third Quadrant Conduction  í T = 125°C í í í í í í í í í  VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Reverse Drain Current vs Drain-to-Source Voltage Third Quadrant Conduction IDS, REVERSE DRAIN CURRENT (A) TJ= 75°C TJ= 50°C 20  050-7730 Rev A 10/2016 TJ= 125°C TJ= 100°C 30 10 0.1 1 10 100 700 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 7, Capacitance vs Drain-to-Source Voltage í TJ= 175°C TJ= 150°C 1.05 1 0.95 0.9 í í  5 50 75 100  150 175 TJ, JUNCTION TEMPERATURE (°C) Figure 12, Breakdown Voltage vs Temperature 4 PRELIMINARY APT35SM70B 100 I = 1mA D 1.4 1.2 ID, DRAIN CURRENT (A) (NORMALIZED TO 25°C) VGS(th), THRESHOLD VOLTAGE (V) 1.6 1 0.8 0.6 0.4 10 RDS(on) 1 10μs 100μs 1ms 10ms T = 175°C 100ms/DC J 0.2 T = 100°C C 0 -50 -25 0 25 50 75 0.1 100 125 150 175 1 TJ, JUNCTION TEMPERATURE (°C) Figure 13, Threshold Voltage vs Temperature 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 14, Forward Safe Operating Area D = 0.9 0.8 0.7 0.7 0.6 0.5 0.5 Note: 0.4 0.3 0.3 t2 0.2 0.1 0.05 0.1 0 t1 P DM ZșJC, THERMAL IMPEDANCE (°C/W) 0.9 0. 10 -5 t Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C SINGLE PULSE 10-4 10-2 10-3 0.1 1 RECTANGULAR PULSE DURATION (SECONDS) )LJXUH0D[LPXP(ႇHFWLYH7UDQVLHQW7KHUPDO,PSHGDQFH-XQFWLRQ7R&DVHYV3XOVH'XUDWLRQ TO-247 (B) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Drai n 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.21 (.087) 2.59 (.102) 19.81 (.780) 20.32 (.800) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) Gate Drai n Source 5.45 (.215) BSC 2-Plcs. 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