APT35SM70S

Power Matters™ Silicon Carbide Semiconductor Products Low Switching Losses Low Gate Resistance High Power Density High Thermal Conductivity High Avalanche (UIS) Rating Reduced Heat Sink Requirements High Temperature Operation Reduced Circuit Size and System Costs Overview Silicon Carbide (SiC) is the ideal technology for higher switching frequency, higher efficiency, and higher power (>650 V) applications. Target markets and applications include: • Commercial aviation—actuation, air conditioning, power distribution • Industrial—motor drives, welding, UPS, SMPS, induction heating • Transportation/automotive—EV battery charger, onboard chargers, H/EV powertrain, DC-DC converter, energy recovery • Smart energy—PV inverter, wind turbine • Medical—MRI power supply, X-Ray power supply • Defense and oil drilling—motor drives, auxiliary power supplies SiC MOSFET and SiC Schottky Barrier Diode product lines from Microsemi increase your system efficiency over silicon MOSFET and IGBT solutions while lowering your total cost of ownership by enabling downsized systems and smaller/lower cost cooling. Full In-House and Foundry Capabilities Design • Silvaco design and process simulator Discrete Products • TCAD-TMA • Mask-making and layout • Solid works and FEA Process • High-temperature ion implantation • High-temperature annealing • SiC MOSFET gate oxide • ASML steppers • RIE and plasma etching • Sputtered and evaporated metal deposition AnalyticalReleased and Support • SEM/EDAX Products • Thermal imaging 600 Volt • Photo Emission Microscope system (Phemos 1000) • Future Products 2013 150°C Rated Schottky Barrier 30A • Reliability Testing and Screening Diodes: 10A, 20A, • AEC-Q101 • Wafer-level HTRB/HTGB • 175°C Rated • Sonoscan and X-ray10A, Diodes: 1200 Volt 1700V-175° C Rated Schottky Barrier Diodes: 10A, 20A james.kerr 4/22/13 1 Released Products • Schottky Barrier 20A, 30A 2014 1200V-175°C Rated Schottky Barrier Diode: 50A 600 Volt • Deleted: james.kerr 4/22/13 1 Deleted: james.kerr 4/22/13 1 150°C Rated Schottky Barrier Formatted: Font:12 The Power of Silicon Carbide Semiconductors Breakthrough Technology Combines High Performance with Low Losses Silicon Carbide (SiC) semiconductors are an innovative new option for power electronic designers looking to improve system efficiency, with a smaller form factor and higher operating temperature in products covering industrial, automotive, medical, mil-aerospace, and communication market segments. Microsemi is proud to be at the forefront of this game changing technology with a comprehensive portfolio of SiC solutions. Reduction in Losses Extremely Low Switching Losses • Zero reverse recovery charge improves system efficiency Model Inverter High Thermal Conductivity • 2.5x more thermally conductive than silicon Conduction Losses IGBT + Si FWD High Temperature Operation • Increased power density and improved reliability Automotive Switching Losses IGBT+SiC SBD Reduced Sink Requirements • Results in lower cost and smaller size SiC is the perfect technology to address high-frequency and high-power-density applications All SiC Solution = 70% Reduction in Losses SiC Switch + SiC SBD High Power Density • Smaller footprint device reduces system size and weight 0 Lower power losses Higher frequency cap. Higher junction temp. Industrial Aviation 20 40 60 80 100 Easier cooling Downsized system Higher reliability Defense Medical Power Modules SiC Power Module Advantages • High-speed switching • Low switching losses • Low input capacitance • Low drive requirements • Low profile • Minimum parasitic inductance • Lower system cost • Increased reliability Standard Modules Part Number APT2X20DC60J APT2X30DC60J APT2X40DC60J APT2X50DC60J APT2X60DC60J APT2X20DC120J APT2X40DC120J APT2X50DC120J APT2X60DC120J APT40DC60HJ APTDC40H601G APT20DC120HJ APTDC20H1201G APT40DC120HJ APT30SM120JCU2 APT100MC120JCU2 APTSM120HM50CT3AG APTMC120HM17CT3AG APTMC120AM55CT1AG APTSM120AM55CT1AG APTMC120AM25CT3AG APTMC120AM20CT1AG APTSM120AM25CT3AG APTMC120AM12CT3AG APTMC120AM08CD3AG APTMC120AM09CT3AG APTSM120AM08CT6AG APTMC170AM60CT1AG APTMC170AM30CT1AG APTMC60TL11CT3AG APTMC60TLM55CT3AG APTMC60TLM14CAG APTMC120HR11CT3AG APTMC120HRM40CT3AG APTSM120TA10CT3AG APTSM120TAM34CT3AG APTSM120TAM33CTPAG APTMC120TAM17CTPAG APTMC120TAM12CTPAG Type Electrical Topology Voltage (V) 600 Dual diode Diode module 1200 600 Full bridge 1200 Boost chopper Full bridge 1200 Phase leg MOSFET module 1700 600 Three level inverter Three-phase bridge Triple phase leg 1200 Current (A) Package Type 20 30 40 50 60 20 40 50 60 40 40 20 20 40 30 100 59 110 40 59 80 100 118 150 185 200 293 40 80 20 40 160 20 50 30 55 89 100 150 SOT227 SOT227 SOT227 SOT227 SOT227 SOT227 SOT227 SOT227 SOT227 SOT227 SP1 SOT227 SP1 SOT227 SOT227 SOT227 SP3F SP3F SP1 SP1 SP3F SP1 SP3F SP3F D3 SP3F SP6 SP1 SP1 SP3F SP3F SP6 SP3F SP3F SP3F SP3F SP6P SP6P SP6P Customization Microsemi offers a complete engineering solution with mix and match capabilities in terms of package, interconnection, configuration, performance, and cost. Out of the existing standard power modules product line, Microsemi can offer simple, modified, or fully customized parts to meet 100% of our customers’ needs. • Design expertise • High power density • Low profile packages • Extended temperature capabilities • Pin locating flexibility • Mix of silicon Discrete Products SiC Schottky Barrier Diodes Part Number MSC010SDA070K MSC030SDA070K MSC050SDA070B MSC010SDA120B MSC010SDA120K MSC030SDA120B MSC030SDA120S MSC050SDA120B MSC050SDA120S MSC010SDA170B MSC030SDA170B MSC050SDA170B Voltage (V) 700 1200 1700 IF (A) VF (Typical at 25°C) Package 10 30 50 10 10 30 30 50 50 10 30 50 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 TO-220 TO-220 TO-247 TO-247 TO-220 TO-247 D3PAK TO-247 D3PAK TO-247 TO-247 TO-247 SiC MOSFETs Part Number APT35SM70B APT35SM70S APT70SM70B APT70SM70S APT70SM70J APT130SM70B APT130SM70J APT25SM120B APT25SM120S APT40SM120B APT40SM120S APT40SM120J APT80SM120B APT80SM120S APT80SM120J Voltage (V) Current (A) RDS(ON) (Typical) 700 35 125 mΩ* 700 58 75 mΩ* 700 78 35 mΩ* 1200 25 140 mΩ 1200 40 80 mΩ 1200 80 40 mΩ Package TO-247 D3PAK TO-247 D3PAK SOT-227 TO-247 SOT-227 TO-247 D3PAK TO-247 D3PAK SOT-227 TO-247 D3PAK SOT-227 *Preliminary current and typical RDS(ON) values. Consult the datasheet for device ratings by package. SiC MOSFETs Characteristics SiC vs. Si Results Benefits Breakdown field (MV/cm) Electron sat. velocity (cm/s) Bandgap energy (ev) Thermal conductivity (W/m.K) Positive temperature coefficient 10x higher 2x higher 3x higher 3x higher Lower on-resistance Faster switching Higher junction temperature Higher power density Self regulation Higher efficiency Size reduction Improved cooling Higher current capabilities Easy paralleling SiC Modules= Higher Power Density Parameter Semiconductor type Ratings at Tc=25°C Package type Current at 30 kHz Tc=75°C, D=50%, V=600 V Current at 50 kHz Tc=75°C, D=50%, V=600 V Eon+Eoff at 100 A Tj=150°C, V=600 V Microsemi APTGLQ300A120G Trench4 IGBT 500 A/1200 V SP6: 108 mm × 62 mm Microsemi APTMC120AM20CT1AG SiC MOSFET 143 A/1200 V SP1: 52 mm × 41 mm Comparison: SiC vs Si 130 A 130 A 60 A 115 A ~2.0x higher 16.0 mJ 3.4 mJ 4.7x lower 3x smaller Microsemi is continually adding new products to its industry-leading portfolio. For the most recent updates to our product line and for detailed information and specifications, please call, email, or visit our website. Toll-free: 800-713-4113 sales.support@microsemi.com www.microsemi.com Microsemi Corporate Headquarters One Enterprise, Aliso Viejo, CA 92656 USA Within the USA: +1 (800) 713-4113 Outside the USA: +1 (949) 380-6100 Fax: +1 (949) 215-4996 Email: sales.support@microsemi.com www.microsemi.com ©2017 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are registered trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world’s standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California and has approximately 4,800 employees globally. Learn more at www.microsemi.com. Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the Buyer’s responsibility to independently determine suitability of any products and to test and verify the same. The information provided by Microsemi hereunder is provided “as is, where is” and with all faults, and the entire risk associated with such information is entirely with the Buyer. 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