APT36GA60SD15

APT36GA60BD15 APT36GA60SD15 600V High Speed PT IGBT TO APT36GA60SD15 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during APT36GA60BD15 switching, resulting in low EMI, even when switching at high frequency. Combi (IGBT and Diode) ® FEATURES • Fast switching with low EMI • Very Low Eoff for maximum efficiency • Ultra low Cres for improved noise immunity • Low conduction loss • Low gate charge • Increased intrinsic gate resistance for low EMI • RoHS compliant TYPICAL APPLICATIONS • ZVS phase shifted and other full bridge • Half bridge • High power PFC boost • Welding • UPS, solar, and other inverters • High frequency, high efficiency industrial Absolute Maximum Ratings Symbol Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG TL Parameter Collector Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current 1 Gate-Emitter Voltage 2 Ratings 600 65 36 109 ±30 290 109A @ 600V -55 to 150 300 Unit V A V W Total Power Dissipation @ TC = 25°C Switching Safe Operating Area @ TJ = 150°C Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" from Case for 10 Seconds °C Static Characteristics Symbol VBR(CES) VCE(on) VGE(th) ICES IGES TJ = 25°C unless otherwise specified Test Conditions VGE = 0V, IC = 1.0mA VGE = 15V, IC = 20A VCE = 600V, VGE = 0V TJ = 25°C TJ = 125°C 3 TJ = 25°C TJ = 125°C Parameter Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Min 600 Typ 2.0 1.9 4.5 Max 2.5 6 275 3000 ±100 Unit V VGE =VCE , IC = 1mA μA nA 052-6336 Rev C 6- 2009 VGS = ±30V Microsemi Website - http://www.microsemi.com Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc SSOA td(on) tr td(off) tf Eon2 Eoff td(on) tr td(off) tf Eon2 Eoff TJ = 25°C unless otherwise specified Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 300V IC = 20A TJ = 150°C, RG = 10Ω4, VGE = 15V, L= 100uH, VCE = 600V Inductive Switching (25°C) VCC = 400V VGE = 15V IC = 20A RG = 10Ω4 6 APT36GA60B_SD15 Min Typ 2880 226 328 102 18 36 109 16 14 122 77 307 254 14 15 149 113 508 439 μJ ns μJ ns nC pF Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Max Unit Gate-Emitter Charge Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy 6 A TJ = +25°C Inductive Switching (125°C) VCC = 400V VGE = 15V IC = 20A RG = 10Ω4 TJ = +125°C Thermal and Mechanical Characteristics Symbol RθJC RθJC WT Torque Characteristic Junction to Case Thermal Resistance (IGBT) Junction to Case Thermal Resistance (Diode) Package Weight Mounting Torque (TO-247 Package), 4-40 or M3 screw Min - Typ - Max .43 1.35 Unit °C/W g in·lbf - 5.9 10 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 052-6336 Rev C 6 - 2009 Typical Performance Curves 60 50 40 30 20 10 0 V GE APT36GA60BD_S15 280 240 200 12V 160 11V 120 80 40 0 10V 9V 8V 6V 0 4 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25°C) I = 20A C T = 25°C J = 15V 15V 13V IC, COLLECTOR CURRENT (A) TJ= 55°C TJ= 25°C TJ= 125°C TJ= 150°C 0 1 2 3 4 5 6 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25°C) VGE, GATE-TO-EMITTER VOLTAGE (V) 250 μs PULSE TEST