APT36N90BC3G

900V 36A APT36N90BC3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. C OLMOS O Power Semiconductors Super Junction MOSFET TO -24 7 D3 • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated • Dual die (parallel) • Popular T-MAX Package Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. D G S MAXIMUM RATINGS Symbol Parameter VDSS ID IDM VGS PD Drain-Source Voltage Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current 1 All Ratings per die: TC = 25°C unless otherwise specified. APT36N90BC3G 900 36 23 96 ±20 390 Volts Watts Amps UNIT Volts Gate-Source Voltage Continuous Total Power Dissipation @ TC = 25°C TJ,TSTG Operating and Storage Junction Temperature Range TL dv/ dt IAR EAR EAS Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 400V, ID = 36A, TJ = 125°C) Avalanche Current 2 2 ( Id = 8.8A, Vdd = 50V ) ( Id = 8.8A, Vdd = 50V ) -55 to 150 260 50 8.8 2.9 1940 °C V/ns Amps mJ Repetitive Avalanche Energy Single Pulse Avalanche Energy STATIC ELECTRICAL CHARACTERISTICS Symbol BV(DSS) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) Drain-Source On-State Resistance 3 MIN 900 TYP MAX UNIT Volts (VGS = 10V, ID = 18A) 2.5 0.10 50 3 0.12 100 100 3.5 Ohms μA nA Volts 12-2010 050-8068 Rev B Zero Gate Voltage Drain Current (VDS = 900V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 900V, VGS = 0V, TC = 150°C) Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.9mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. "COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG." Microsemi Website - http://www.microsemi.com APT36N90BC3G Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD dv Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 4 Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 450V ID = 36A @ 25°C INDUCTIVE SWITCHING VGS = 15V VDD = 600V ID = 36A @ 25°C RG = 4.3Ω 5 MIN TYP MAX UNIT pF 7463 6827 167 252 38 112 70 20 400 25 1500 750 2130 867 MIN TYP MAX Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time (IS = -36A, di/dt = 100A/ μs) Reverse Recovery Charge (IS = -36A, di/dt = 100A/ μs) Peak Recovery Current (IS = -36A, di/dt = 100A/ μs) Characteristic Junction to Case Junction to Ambient 1 3 nC ns INDUCTIVE SWITCHING @ 25°C VDD = 600V, VGS = 15V ID = 36A, RG = 4.3Ω INDUCTIVE SWITCHING @ 125°C VDD = 600V, VGS = 15V ID = 36A, RG = 4.3Ω μJ 5 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS UNIT Amps 36 96 0.8 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C MIN (Body Diode) (VGS = 0V, IS = 18A) 6 /dt dv 1.2 10 Volts V/ns ns μC /dt t rr Q rr IRRM 930 1230 35 44 70 68 TYP MAX Amps THERMAL CHARACTERISTICS Symbol RθJC RθJA UNIT °C/W 0.3 31 4 See MIL-STD-750 Method 3471 5 Eon includes diode reverse recovery. 6 Maximum 125°C diode commutation speed = di/dt 600A/μs 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Repetitive avalanche causes additional power losses that can be calculated as PAV = EAR*f . Pulse width tp limited by Tj max. 3 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2% 0.35 ZθJC, THERMAL IMPEDANCE (°C/W) 0.30 0.25 0.7 0.20 0.15 0.10 0.05 0 0.5 0.3 D = 0.9 Microsemi reserves the right to change, without notice, the specifications and information contained herein. 12-2010 Note: PDM t1 t2 050-8068 Rev B 0.1 0.05 10 -5 SINGLE PULSE 10 -4 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC t 10-2 0.1 10-3 RECTANGULAR PULSE DURATION (SECONDS) Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10 Typical Performance Curves 120 10 &15V 100 IC, DRAIN CURRENT (A) 80 60 5V 40 20 0 4.5V 4V 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 2, Low Voltage Output Characteristics NORMALIZED TO V GS APT36N90BC3G 100 6.5V ID, DRAIN CURRENT (A) 90 80 5.5V 70 60 50 40 30 20 10 0 0 1 TJ= -55°C TJ= 25°C TJ= 125°C 2 3 4 5 6 VDS> ID (ON) x RDS (ON)MAX. 250 μSEC. PULSE TEST @