APT37F50S

APT37F50B APT37F50S 500V, 37A, 0.15Ω Max, trr, ≤250ns N-Channel FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. TO -2 47 D3PAK APT37F50B APT37F50S D Single die FREDFET G S FEATURES • Fast switching with low EMI • Low trr for high reliability • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant TYPICAL APPLICATIONS • ZVS phase shifted and other full bridge • Half bridge • PFC and other boost converter • Buck converter • Single and two switch forward • Flyback Absolute Maximum Ratings Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive 1 Ratings 37 24 115 ±30 780 18 Unit A V mJ A Thermal and Mechanical Characteristics Symbol PD RθJC RθCS TJ,TSTG TL WT Characteristic Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) Package Weight 0.22 6.2 10 1.1 -55 0.11 150 300 Min Typ Max 520 0.24 Unit W °C/W °C 3-2007 050-8125 Rev A oz g in·lbf N·m Torque Mounting Torque ( TO-247 Package), 6-32 or M3 screw Microsemi Website - http://www.microsemi.com Static Characteristics Symbol VBR(DSS) ∆VBR(DSS)/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS TJ = 25°C unless otherwise specified Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 250µA VGS = 10V, ID = 18A APT37F50B_S Typ 0.60 0.13 4 -10 Max Unit V V/°C Ω V mV/°C µA nA Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance 3 Min 500 Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current VGS = VDS, ID = 1mA VDS = 600V VGS = 0V TJ = 25°C TJ = 125°C 3 0.15 5 250 1000 ±100 VGS = ±30V Dynamic Characteristics Symbol gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf 4 TJ = 25°C unless otherwise specified Test Conditions VDS = 50V, ID = 18A VGS = 0V, VDS = 25V f = 1MHz Parameter Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related Min Typ 27 5710 75 615 355 Max Unit S pF 5 VGS = 0V, VDS = 0V to 333V Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time VGS = 0 to 10V, ID = 18A, VDS = 250V Resistive Switching VDD = 333V, ID = 18A RG = 4.7Ω 6 , VGG = 15V 180 145 32 65 25 29 65 21 nC ns Source-Drain Diode Characteristics Symbol IS ISM VSD trr Qrr Irrm dv/dt Parameter Test Conditions MOSFET symbol showing the integral reverse p-n junction diode (body diode) Min D Typ Max 37 Unit A Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dt G S TJ = 25°C TJ = 125°C 115 1.0 250 450 0.88 2.18 8.4 11.8 20 V ns µC A V/ns ISD = 18A, TJ = 25°C, VGS = 0V ISD = 18A 3 diSD/dt = 100A/µs VDD = 100V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C ISD ≤ 18A, di/dt ≤1000A/µs, VDD = 333V, TJ = 125°C 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 4.81mH, RG = 4.7Ω, IAS = 18A. 3-2007 Rev A 050-8125 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -1.33E-7/VDS^2 + 3.06E-8/VDS + 8.83E-11. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. 140 120 ID, DRAIN CURRENT (A) 100 80 V GS = 10V 70 TJ = -55°C APT37F50B_S T = 125°C J V 60 ID, DRIAN CURRENT (A) 50 40 30 20 10 0 0 GS = 7 &,10V 6.5V TJ = 25°C 6V 60 40 TJ = 150°C 5.5V 20 0 5V TJ = 125°C 25 20 15 10 5 0 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) Figure 1, Output Characteristics NORMALIZED TO VGS = 10V @ 18A 30 25 20 15 10 5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 2.5 120 100 ID, DRAIN CURRENT (A) 80 60 40 VDS> ID(ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @