APT40DR160HJ

APT40DR160HJ ISOTOP® Rectifier diode full bridge Power Module VRRM = 1600V IF = 40A @ Tc = 80°C Application • Input mains rectifier Features • • • • • • • Planar double passivated chips High blocking voltage High current Low leakage current Very low stray inductance High level of integration ISOTOP® Package (SOT-227) ~ ~ - + Benefits • • • • • • Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Absolute maximum ratings Symbol VR VRRM IF IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage DC Forward Current Non-Repetitive Forward Surge Current Max ratings 1600 t=10ms TC = 80°C TJ = 45°C 40 400 Unit V APT40DR160HJ – Rev 0 November, 2009 A These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-3 APT40DR160HJ All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IR VF VT rT Reverse Current Forward Voltage On – state Voltage On – state Slope resistance Test Conditions VR = 1600V IF = 40A Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min Typ 20 2 1.3 1.1 0.8 10.5 Max Unit µA mA V V mΩ Thermal and package characteristics Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt Characteristic Junction to Case Thermal resistance Junction to Ambient RMS Isolation Voltage, any terminal to case t =1 min, I isol