APT40GR120B2D30

APT40GR120B2D30 APT40GR120B2D30 1200V, 40A, VCE(on)= 2.5V Typical Ultra Fast NPT - IGBT® The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and ultrafast switching speed. TO -24 7 Features • Low Saturation Voltage • Short Circuit Withstand Rated • Low Tail Current • High Frequency Switching to 50KHz • RoHS Compliant • Ultra Low Leakage Current Combi (IGBT and Diode) Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is recommended for applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol Parameter Ratings Vces Collector Emitter Voltage 1200 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 88 I C2 Continuous Collector Current @ TC = 100°C 40 I CM Pulsed Collector Current 160 SCWT PD TJ,TSTG TL 1 Unit V A Short Circuit Withstand Time: VCE = 600V, VGE = 15V, TC=125°C 10 μs Total Power Dissipation @ TC = 25°C 500 W Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Min V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA) 1200 VGE(TH) Gate Threshold Voltage VCE(ON) I CES Typ Max 4.5 6.0 Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 25°C) 2.5 3.2 Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 125°C) 3.5 Collector-Emitter On Voltage (VGE = 15V, I C = 88A, Tj = 25°C) 3.2 (VCE = VGE, I C = 2.0mA, Tj = 25°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 3 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) I GES 20 2 2 Unit Volts 1100 μA ±250 nA 200 Gate-Emitter Leakage Current (VGE = ±20V) Microsemi Website - http://www.microsemi.com 052-6401 Rev A 4-2012 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. DYNAMIC CHARACTERISTICS Symbol Parameter Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate to Emitter Plateau Voltage Qg Total Gate Charge 3 Qge Gate-Emitter Charge Qgc Gate- Collector Charge td(on) Turn-On Delay Time tr td(off) tf Test Conditions Min Typ Capacitance 3980 VGE = 0V, VCE = 25V 320 f = 1MHz 80 Max V 210 VGE = 15V 25 VCE= 600V nC 90 IC = 40A Inductive Switching (25°C) 22 VCC = 600V 25 Turn-Off Delay Time VGE = 15V 163 ns 40 IC = 40A Turn-On Switching Energy RG = 4.3 Ω 1375 3000 Eoff 6 Turn-Off Switching Energy TJ = +25°C 906 1650 td(on) Turn-On Delay Time 5 tr td(off) tf 4 Inductive Switching (125°C) 22 Current Rise Time VCC = 600V 25 Turn-Off Delay Time VGE = 15V 185 Current Fall Time μJ ns 47 IC = 40A 5 Turn-On Switching Energy RG = 4.3 Ω Eoff 6 Turn-Off Switching Energy TJ = +125°C Eon2 Unit pF 7 Gate Charge Current Rise Time Current Fall Time Eon2 APT40GR120B2D30 4 1916 3500 1186 2500 Typ Max μJ THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic Min Junction to Case Thermal Resistance (IGBT) .25 Junction to Case Thermal Resistance (Diode) .80 RθJA Junction to Ambient Thermal Resistance 40 WT Package Weight RθJC Unit °C/W .22 oz 6.2 g 052-6401 Rev A 4-2012 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES APT40GR120B2D30 80 300 V GE IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 250 TJ= - 55°C 60 TJ= 25°C 50 13V 10V 15V = 15V 70 TJ= 125°C 40 TJ= 150°C 30 20 10 9V 200 150 8V 100 7V 50 6V 0 1 2 3 4 5 6 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25°C) 4.5 4.0 IC = 40A 3.5 3.0 IC = 20A 2.5 2.0 VGE = 15V. 250μs PULSE TEST