APT40M35JVFR

APT40M35JVFR 400V Ω 0.035Ω 93A POWER MOS V® FREDFET S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. 27 2 T- D G SO "UL Recognized" ISOTOP ® • Faster Switching • Avalanche Energy Rated • Lower Leakage • FAST RECOVERY BODY DIODE D G • Popular SOT-227 Package S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT40M35JVFR UNIT 400 Volts Drain-Source Voltage 93 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 700 Watts Linear Derating Factor 5.6 W/°C VGSM PD TJ,TSTG 372 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy °C 300 93 (Repetitive and Non-Repetitive) EAR Volts 1 Amps 50 4 mJ 3600 STATIC ELECTRICAL CHARACTERISTICS ID(on) RDS(on) IDSS IGSS VGS(th) MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 400 Volts 93 Amps On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 46.5A) TYP MAX 0.035 UNIT Ohms Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 320V, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 4 Volts Gate Threshold Voltage (VDS = VGS, ID = 5mA) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com µA 7-2004 BVDSS Characteristic / Test Conditions 050-5892 Rev A Symbol DYNAMIC CHARACTERISTICS Symbol APT40M35JVFR Characteristic Test Conditions TYP MAX VGS = 0V 16800 20160 VDS = 25V 2400 3360 f = 1 MHz 1070 1605 VGS = 10V 710 1065 VDD = 200V ID = 93A @ 25°C 80 340 120 510 Turn-on Delay Time VGS = 15V 20 40 Rise Time VDD = 200V 30 60 ID = 93A @ 25°C 75 115 RG = 0.6Ω 14 28 TYP MAX C iss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs 3 Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge t d(on) tr t d(off) Turn-off Delay Time tf Fall Time MIN UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN 93 Continuous Source Current (Body Diode) IS ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 dv/ Peak Diode Recovery dt dv/ UNIT Amps (Body Diode) 372 (VGS = 0V, IS = - 93A) 1.3 Volts 15 V/ns dt 5 t rr Reverse Recovery Time (IS = -93A, di/dt = 100A/µs) Tj = 25°C 300 Tj = 125°C 600 Q rr Reverse Recovery Charge (IS = -93A, di/dt = 100A/µs) Tj = 25°C 2.2 Tj = 125°C 9 IRRM Peak Recovery Current (IS = -93A, di/dt = 100A/µs) Tj = 25°C 16 Tj = 125°C 33 ns µC Amps THERMAL/ PACKAGE CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP MAX UNIT 0.18 40 °C/W 2500 VIsolation RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Torque Maximum Torque for Device Mounting Screws and Electrical Terminations. Volts 10 1 Repetitive Rating: Pulse width limited by maximum junction lb•in 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 0.83mH, R = 25Ω, Peak I = 93A j G L 5 I ≤ I = 93A, di/ = 100A/µs, T ≤ 150°C, R = 2.0Ω V = 400V. S D j G R dt APT Reserves the right to change, without notice, the specifications and information contained herein. temperature. 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 0.1 D=0.5 0.05 0.2 0.1 0.01 0.005 0.05 Note: 0.02 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-5892 Rev A 7-2004 0.2 0.01 SINGLE PULSE t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.001 0.0005 10-5 t1 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10 APT40M35JVFR 200 VGS=6.5V, 7V, 10V & 15V 160 6V 120 5.5V 80 5V 40 4.5V ID, DRAIN CURRENT (AMPERES) 0 TJ = +125°C VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @