APT40M42JN

S S D D G G 27 2 T- SO APT40M42JN 400V 86A 0.042Ω S "UL Recognized" File No. E145592 (S) ISOTOP® POWER MOS IV ® SINGLE DIE ISOTOP® PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT 40M42JN UNIT 400 Volts Drain-Source Voltage 86 Continuous Drain Current @ TC = 25°C 1 Amps IDM, lLM Pulsed Drain Current VGS Gate-Source Voltage ±30 Volts Total Power Dissipation @ TC = 25°C 690 Watts Linear Derating Factor 5.52 W/°C PD TJ,TSTG TL 344 and Inductive Current Clamped -55 to 150 Operating and Storage Junction Temperature Range °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Characteristic / Test Conditions / Part Number APT40M42JN Drain-Source Breakdown Voltage (VGS = 0V, I D = 250 µA) On State Drain Current MIN TYP MAX 400 Volts 2 APT40M42JN 86 Amps (VDS > I D(ON) x R DS(ON) Max, VGS = 10V) Drain-Source On-State Resistance UNIT 2 0.042 APT40M42JN Ohms (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 µA Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 4 Volts MAX UNIT Gate Threshold Voltage (VDS = VGS, I D = 5.0mA) 2 THERMAL CHARACTERISTICS Characteristic MIN RΘJC Junction to Case RΘCS Case to Sink (Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.) TYP 0.18 0.05 °C/W CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364 F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord 050-4038 Rev E Symbol APT40M42JN DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX Ciss Input Capacitance VGS = 0V 11140 14000 Coss Output Capacitance VDS = 25V 2600 3640 Crss Reverse Transfer Capacitance f = 1 MHz 960 1440 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) VGS = 10V 507 760 VDD = 0.5 VDSS 70 105 ID = ID [Cont.] @ 25°C 234 350 VGS = 15V 21 40 3 Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf VDD = 0.5 VDSS 41 80 ID = ID [Cont.] @ 25°C 62 95 RG = 0.6Ω 14 30 TYP MAX Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions Continuous Source Current (Body Diode) IS MIN APT40M42JN 86 APT40M42JN 344 UNIT Amps ISM Pulsed Source Current (Body Diode) 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -ID [Cont.], dl S/dt = 100A/µs) 535 1070 ns Q rr Reverse Recovery Charge (IS = -ID [Cont.], dl S/dt = 100A/µs) 13 26 µC TYP MAX UNIT (VGS = 0V, IS = -ID [Cont.]) 1.8 Volts PACKAGE CHARACTERISTICS Symbol Characteristic / Test Conditions MIN LD Internal Drain Inductance (Measured From Drain Terminal to Center of Die.) 3 LS Internal Source Inductance (Measured From Source Terminals to Source Bond Pads) 5 VIsolation RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) CIsolation Drain-to-Mounting Base Capacitance (f = 1MHz) Torque Maximum Torque for Device Mounting Screws and Electrical Terminations. nH 2500 Volts 70 pF 13 1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1) 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.1 D=0.5 0.05 0.2 0.1 0.01 0.005 0.05 Note: 0.02 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-4038 Rev E 0.2 0.01 t1 t2 0.001 0.0005 10-5 SINGLE PULSE 10-4 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION in-lbs APT40M42JN 200 200 160 6V 120 5.5V 80 5V 4.5V 40 ID, DRAIN CURRENT (AMPERES) 10V 160 8V 5.5V 80 5V 40 4.5V 4V 4V 0 0 120 TJ = +25°C TJ = +125°C 80 40 TJ = +125°C TJ = +25°C TJ = -55°C 0 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS ID, DRAIN CURRENT (AMPERES) 90 60 30 0 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 25 BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @