APT40N60B2CF

600V 40A 0.110Ω APT40N60B2CF APT40N60LCF APT40N60B2CFG* APT40N60LCFG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. C OLMOS O Power Semiconductors Super Junction FREDFET T-MaxTM • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated • Intrinsic Fast-Recovery Body Diode • Extreme Low Reverse Recovery Charge • Ideal For ZVS Applications • Popular T-MAX™ or TO-264 Package TO-264 D G S Unless stated otherwise, Microsemi discrete FREDFETs contain a single FREDFET die. This device is made with two parallel FREDFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL dv/ dt IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current 1 All Ratings: TC = 25°C unless otherwise specified. APT40N60B2CF(G)_LCF(G) UNIT Volts 600 40 26 80 ±30 417 3.33 -55 to 150 260 80 20 7 4 Amps Gate-Source Voltage Continuous Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 40A, TJ = 125°C) Avalanche Current 7 Volts Watts W/°C °C V/ns Amps mJ Repetitive Avalanche Energy 1 690 Single Pulse Avalanche Energy STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 500µA) Drain-Source On-State Resistance 2 MIN 600 TYP MAX UNIT Volts (VGS = 10V, ID = 20A) 0.110 4.2 3400 ±100 3 4 5 Ohms µA nA Volts 6-2006 050-7236 Rev B Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C) Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com "COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG." DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgd td(on) td(off) tf Eon Eoff Eon Eoff Symbol IS VSD dv APT40N60B2CF(G)_LCF(G) Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 40A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 380V ID = 40A @ 25°C RG = 1.8Ω 6 Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 MIN TYP MAX UNIT pF 5040 1365 80 185 36 115 12 15 60 6.4 725 365 1195 440 MIN TYP MAX Qgs Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery dv 1 2 nC tr ns INDUCTIVE SWITCHING @ 25°C VDD = 400V, VGS = 15V ID = 40A, RG = 5Ω INDUCTIVE SWITCHING @ 125°C VDD = 400V, VGS = 15V ID = 40A, RG = 5Ω 6 µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS UNIT Amps Volts V/ns ns µC Amps 40 80 2.4 40 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C MIN ISM (Body Diode) (VGS = 0V, IS = -40A) 5 /dt /dt t rr Q rr IRRM Reverse Recovery Time (IS = -40A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -40A, /dt = 100A/µs) Peak Recovery Current (IS = -40A, /dt = 100A/µs) Characteristic Junction to Case Junction to Ambient di di 195 290 1.8 3.5 17 22 TYP MAX THERMAL CHARACTERISTICS Symbol RθJC RθJA UNIT °C/W 0.30 31 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.35 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.30 0.25 0.20 0.15 0.10 0.05 0 0.7 0.5 0.3 4 Starting Tj = +25°C, L = 13.80mH, RG = 25Ω, Peak IL = 10A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID40A di/dt ≤ 700A/µs VR ≤ 480V TJ ≤125°C 6 Eon includes diode reverse recovery. See figures 18, 20. 7 Repetitive avalanche causes additional power losses that can be calculated as PAV = EAR*f 0.9 6-2006 Note: PDM 050-7236 Rev B t1 t2 0.1 0.05 10-5 10-4 SINGLE PULSE Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC t 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Typical Performance Curves ID, DRAIN CURRENT (AMPERES) 100 90 80 70 60 50 40 30 20 10 0 VGS = 15 &10 V APT40N60B2CF(G)_LCF(G) 8V TJ (°C) 0.0136 Dissipated Power (Watts) 0.00308 0.00145 0.00948 0.231 0.0289 0.0988 TC (°C) 0.158 7.5V ZEXT 7V 6.5V 6V 5.5V ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 120 0 5 10 15 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 1.40 1.30 1.20 VGS=10V NORMALIZED TO VGS = 10V @ 20A VDS> ID(ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @