APT43GA90B APT43GA90S
900V High Speed PT IGBT
POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency.
®
(B)
TO -2 47
D3PAK
C G E
(S)
G
C
E
Single die IGBT
FEATURES
• Fast switching with low EMI • Very Low Eoff for maximum efficiency • Ultra low Cres for improved noise immunity • Low conduction loss • Low gate charge • Increased intrinsic gate resistance for low EMI • RoHS compliant
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge • Half bridge • High power PFC boost • Welding • UPS, solar, and other inverters • High frequency, high efficiency industrial
Absolute Maximum Ratings
Symbol
Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG TL
Parameter
Collector Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current Gate-Emitter Voltage 2 Total Power Dissipation @ TC = 25°C Switching Safe Operating Area @ TJ = 150°C Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
1
Ratings
900 78 43 129 ±30 337 129A @ 900V -55 to 150 300
Unit
V
A
V W
°C
Static Characteristics
Symbol
VBR(CES) VCE(on) VGE(th) ICES IGES
TJ = 25°C unless otherwise specified
Test Conditions
VGE = 0V, IC = 1.0mA VGE = 15V, IC = 25A VCE = 900V, VGE = 0V TJ = 25°C TJ = 125°C 3 TJ = 25°C TJ = 125°C
Parameter
Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current
Min
900
Typ
2.5 2.2 4.5
Max
3.1 6 250 1000 ±100
Unit
V
VGE =VCE , IC = 1mA
μA nA
052-6333 Rev C 7 - 2009
VGS = ±30V
Thermal and Mechanical Characteristics
Symbol
RθJC WT Torque
Characteristic
Junction to Case Thermal Resistance Package Weight Mounting Torque (TO-247 Package), 4-40 or M3 screw
Min
-
Typ
5.9
Max
0.37 -
Unit
°C/W g in·lbf
10
Microsemi Website - http://www.microsemi.com
Dynamic Characteristics
Symbol
Cies Coes Cres Qg2 Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eoff5 td(on tr td(off) tf Eon1 Eoff5
TJ = 25°C unless otherwise specified
Test Conditions
Capacitance VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 450V IC = 25A TJ = 150°C, RG = 4.7Ω, VGE = 15V, L= 100uH, VCE = 900V Inductive Switching (25°C) VCC = 600V VGE = 15V IC = 25A RG = 4.7Ω3 TJ = +25°C Inductive Switching (125°C) VCC = 600V VGE = 15V IC = 25A RG = 4.7Ω3 TJ = +125°C 129 12 16 82 57 875 425 12 16 117 129 1660 1000
APT43GA90B_S
Min Typ
2465 227 34 116 18 44 nC pF
Parameter
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy
Max
Unit
A
ns
μJ
ns
μJ
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380μs, duty cycle < 2%. See Mil-Std-750 Method 3471 3 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 4 Eon1 is the inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on switching loss. It is measured by clamping the inductance with a silicon carbide Schottky diode. 5 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6333 Rev C 7 - 2009
Typical Performance Curves
40
V
GE
APT43GA90B_S
300 15V IC, COLLECTOR CURRENT (A) 250 200 150 10V 100 50 0 9V 8V 5V 0 5 10 15 20 25 30 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25°C)
I = 25A C T = 25°C
J
= 15V
35 IC, COLLECTOR CURRENT (A) 30 25 20
TJ= 55°C
13V 12V 11V
TJ= 125°C 15 10 5 0 TJ= 25°C
TJ= 150°C
0 0.5 1 1.5 2 2.5 3 3.5 4 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25°C) VGE, GATE-TO-EMITTER VOLTAGE (V)
250 μs PULSE TEST
很抱歉,暂时无法提供与“APT43GA90B”相匹配的价格&库存,您可以联系我们找货
免费人工找货