APT44F80L

APT44F80B2 APT44F80L 800V, 47A, 0.21Ω Max trr ≤370ns N-Channel FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. T-Max® TO-264 APT44F80B2 APT44F80L D Single die FREDFET G S FEATURES • Fast switching with low EMI • Low trr for high reliability • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant TYPICAL APPLICATIONS • ZVS phase shifted and other full bridge • Half bridge • PFC and other boost converter • Buck converter • Single and two switch forward • Flyback Absolute Maximum Ratings Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current 1 Ratings 47 29 173 ±30 1980 24 Unit A Gate - Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive V mJ A Thermal and Mechanical Characteristics Symbol PD RθJC RθCS TJ, TSTG TL WT Torque Characteristic Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) Package Weight Min -55 Typ .11 0.22 6.2 Max 1135 .11 150 300 10 1.1 Unit W °C/W °C oz g in·lbf N·m Rev C 05-2009 050-8161 Mounting Torque (TO-264 Package), 4-40 or M3 screw Microsemi Website - http://www.microsemi.com Static Characteristics Symbol VBR(DSS) ∆VBR(DSS)/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS Parameter Drain-Source Breakdown Voltage TJ = 25°C unless otherwise specified Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 250µA APT44F80B2_L Typ 0.87 0.17 2.5 4 -10 250 1000 ±100 0.21 5 Max Unit V V/°C Ω V mV/°C µA nA Min 800 Breakdown Voltage Temperature Coefficient Drain-Source On Resistance 3 VGS = 10V, ID = 24A VGS = VDS, ID = 2.5mA VDS = 800V VGS = 0V TJ = 25°C TJ = 125°C Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current VGS = ±30V Dynamic Characteristics Symbol Parameter Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance 4 5 TJ = 25°C unless otherwise specified Test Conditions VDS = 50V, ID = 24A VGS = 0V, VDS = 25V f = 1MHz Min Typ 43 9330 160 930 440 220 305 51 155 55 Resistive Switching VDD = 400V, ID = 24A RG = 4.7Ω , VGG = 15V 6 Max Unit S gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf pF Effective Output Capacitance, Charge Related Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time VGS = 0V, VDS = 0V to 533V VGS = 0 to 10V, ID = 24A, VDS = 400V nC 75 230 70 ns Source-Drain Diode Characteristics Symbol IS ISM VSD trr Qrr Irrm dv/dt 050-8161 Rev C 05-2009 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dt 1 Test Conditions MOSFET symbol showing the integral reverse p-n junction diode (body diode) G S D Min Typ Max 47 173 1.0 Unit A V nS μC A ISD = 24A, TJ = 25°C, VGS = 0V TJ = 25°C ISD = 24A 3 320 590 1.91 5.18 12.1 18.1 370 710 TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C diSD/dt = 100A/µs VDD = 100V ISD ≤ 24A, di/dt ≤1000A/µs, VDD = 400V, TJ = 125°C 25 V/ns 1 2 3 4 5 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. Starting at TJ = 25°C, L = 6.9mH, RG = 25Ω, IAS = 24A. Pulse test: Pulse Width < 380µs, duty cycle < 2%. Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -8.32E-8/VDS^2 + 3.49E-8/VDS + 1.30E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. APT44F80B2_L V GS = 10V TJ = -55°C T = 125°C J V GS = 10&15V 6V 5.5V ID, DRAIN CURRENT (A) TJ = 25°C ID, DRIAN CURRENT (A) 5V TJ = 150°C TJ = 125°C 4.5V 4V VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) Figure 1, Output Characteristics RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 3.0 2.5 2.0 1.5 1.0 0.5 055 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 3, RDS(ON) vs Junction Temperature 80 70 gfs, TRANSCONDUCTANCE 60 50 40 30 20 10 00 10 20 30 40 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current ID = 24A NORMALIZED TO VGS = 10V @ 24A VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics 160 140 ID, DRAIN CURRENT (A) 120 100 80 60 40 20 0 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics Ciss TJ = -55°C TJ = 25°C TJ = 125°C VDS> ID(ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @