APT45GR65B2DU30

APT45GR65B2DU30 APT45GR65B2DU30 650V, 45A, VCE(on)= 1.9V Typical Ultra Fast NPT - IGBT® with Ultra Soft Recovery Diode The Ultra Fast 650V NPT-IGBT® family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between conduction and switching losses. Features • Low Saturation Voltage • Short Circuit Withstand Rated • Low Tail Current • High Frequency Switching • RoHS Compliant • Ultra Low Leakage Current • Smooth Reverse Recovery • Snap-free Switching Combi (IGBT and Diode) Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is recommended for applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol Parameter Ratings VCES Collector Emitter Voltage 650 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 118 I C2 Continuous Collector Current @ TC = 110°C 56 I CM Pulsed Collector Current 224 SCWT PD TJ,TSTG TL 1 Unit V A Short Circuit Withstand Time: VCE = 325V, VGE = 15V, TC=125°C 10 μs Total Power Dissipation @ TC = 25°C 543 W Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Min V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 350μA) 650 VGE(TH) Gate Threshold Voltage 3.5 VCE(ON) I CES I GES Typ Max 5.0 6.5 Collector-Emitter On Voltage (VGE = 15V, I C = 45A, Tj = 25°C) 1.9 2.4 Collector-Emitter On Voltage (VGE = 15V, I C = 45A, Tj = 125°C) 2.4 Collector-Emitter On Voltage (VGE = 15V, I C = 90A, Tj = 25°C) 2.6 Collector Cut-off Current (VCE = 650V, VGE = 0V, Tj = 25°C) 20 (VCE = VGE, I C = 2.5mA, Tj = 25°C) 2 Collector Cut-off Current (VCE = 650V, VGE = 0V, Tj = 125°C) 2 350 200 Gate-Emitter Leakage Current (VGE = ±20V) ±250 Unit Volts μA nA Microsemi Website - http://www.microsemi.com 052-6435 Rev A 6-2014 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. DYNAMIC CHARACTERISTICS Symbol APT45GR65B2DU30 Parameter Test Conditions Cies Input Capacitance Coes Output Capacitance Min Typ Capacitance 2900 VGE = 0V, VCE = 25V 548 Cres Reverse Transfer Capacitance f = 1MHz 268 VGEP Gate to Emitter Plateau Voltage Gate Charge 7.5 Qg Max pF V Total Gate Charge VGE = 15V 150 203 Qge Gate-Emitter Charge VCE= 325V 18 24 Qgc Gate- Collector Charge IC = 45A 74 100 td(on) Turn-On Delay Time Inductive Switching (25°C) 15 3 tr td(off) tf VCC = 433V 32 Turn-Off Delay Time VGE = 15V 100 Current Fall Time Eon2 Eoff Current Rise Time 5 6 tr td(off) IC = 45A 50 RG = 4.3Ω 4 1100 1650 Turn-Off Switching Energy TJ = +25°C 540 870 Inductive Switching (125°C) 15 Current Rise Time VCC = 433V 32 Turn-Off Delay Time VGE = 15V 123 Current Fall Time IC = 45A 52 Turn-On Switching Energy RG = 4.3Ω 4 1600 2400 Eoff Turn-Off Switching Energy TJ = +125°C 800 1160 Typ Max 6 μJ ns Eon2 5 tf nC ns Turn-On Switching Energy Turn-On Delay Time td(on) Unit μJ THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC RθJA WT Characteristic Min Junction to Case Thermal Resistance (IGBT) 0.23 Junction to Case Thermal Resistance (Diode) 0.80 Junction to Ambient Thermal Resistance 0.22 oz 6.2 g 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the energy loss at turn-on and includes the charge stored in the freewheeling diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES 052-6435 Rev A D = 0.9 0.20 0.5 0.15 0.3 Note: P DM ZθJC, THERMAL IMPEDANCE (°C/W) 6-2014 0.25 0.1 t 0.02 SINGLE PULSE 0 10-5 t1 t2 0.05 0.05 Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C 10-2 10-3 0.1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10-4 °C/W 40 Package Weight 0.10 Unit 1 TYPICAL PERFORMANCE CURVES APT45GR65B2DU30 100 160 90 IC, COLLECTOR CURRENT (A) 180 120 100 80 60 40 20 TJ= - 55°C 70 TJ= 25°C 60 TJ= 125°C 50 TJ= 150°C 40 30 20 20 30 40 50 60 70 80 15V 13V 125 10V 100 9.0V 75 8.0V 50 7.5V 25 0 90 7V 6.5V 0 150 TJ= -55°C 100 50 0 TJ= 150°C TJ= 125°C TJ= 25°C 0 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 250μs PULSE TEST