APT47N65BC3

APT47N65BC3 600V 47A 0.070Ω Super Junction MOSFET C OLMOS O Power Semiconductors TO -24 7 D3 • Ultra low RDS(ON) • Increased Power Dissipation • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL dv All Ratings: TC = 25°C unless otherwise specified. APT47N65BC3 UNIT Volts Amps Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 650 47 141 ±20 ±30 417 3.33 -55 to 150 260 50 20 1 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 47A, TJ = 125°C) Repetitive Avalanche Current Repetitive Avalanche Energy 7 7 Volts Watts W/°C °C V/ns Amps mJ /dt IAR EAR EAS Single Pulse Avalanche Energy 1800 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 650 0.06 0.5 0.07 25 250 (VGS = 10V, ID = 30A) Ohms μA nA Volts Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V, TJ = 150°C) Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.7mA) 2.10 3 3.9 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. "COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG." Microsemi Website - http://www.microsemi.com 050-7202 Rev A 3-2009 ±100 DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT47N65BC3 Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 47A @ 25°C RESISTIVE SWITCHING VGS = 13V VDD = 380V ID = 47A @ 125°C RG = 1.8Ω 6 MIN TYP MAX UNIT 7015 2565 210 260 29 110 18 27 110 8 670 980 1100 1200 μJ ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy 6 INDUCTIVE SWITCHING @ 25°C VDD = 400V, VGS = 15V ID = 47A, RG = 5Ω INDUCTIVE SWITCHING @ 125°C VDD = 400V VGS = 15V ID = 47A, RG = 5Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr dv Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 2 MIN TYP MAX UNIT Amps Volts ns μC 47 141 1.2 580 23 6 (Body Diode) (VGS = 0V, IS = - 47A) Reverse Recovery Time (IS = -47A, dl S/dt = 100A/μs, VR = 350V) Reverse Recovery Charge (IS = -47A, dl S/dt = 100A/μs, VR = 350V) Peak Diode Recovery dv /dt /dt 5 V/ns THERMAL CHARACTERISTICS Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W 0.30 62 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 Microsemi Reserves the right to change, without notice, the specifications and information contained herein. 0.35 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.30 0.25 0.7 0.20 0.15 0.10 0.05 0 0.5 4 Starting Tj = +25°C, L = 36.0mH, RG = 25Ω, Peak IL = 10A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS = -ID47A , di/dt = 700A/μs VR = VDSS, TJ = 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. 7 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f 0.9 Note: 050-7202 Rev A 3-2009 PDM 0.3 SINGLE PULSE 0.1 0.05 10 -5 t1 t2 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC t 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10-4 Typical Performance Curves 180 ID, DRAIN CURRENT (AMPERES) 160 140 120 100 80 60 40 20 0 5.5V 6V VGS =15 & 10V 6.5V APT47N65BC3 RC MODEL Junction temp. (°C) .1426 0.345 Power (watts) 0.00375 .0084 .1566 0.455 Case temperature .1333 0.101 5V 4.5V 4V FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 120 ID, DRAIN CURRENT (AMPERES) 100 80 60 40 20 0 VDS> ID (ON) x RDS (ON)MAX. 250 μSEC. PULSE TEST @