APT4F120K_10

APT4F120K 1200V, 4A, 4.2Ω Max Trr ≤195nS N-Channel FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. TO-220 APT4F120K Single die FREDFET G D S FEATURES • Fast switching with low EMI • Low trr for high reliability • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant TYPICAL APPLICATIONS • ZVS phase shifted and other full bridge • Half bridge • PFC and other boost converter • Buck converter • Single and two switch forward • Flyback Absolute Maximum Ratings Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current 1 Ratings 4 3 15 ±30 310 2 Unit A Gate - Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive V mJ A Thermal and Mechanical Characteristics Symbol PD RθJC RθCS TJ, TSTG TL WT Characteristic Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) Package Weight Min -55 Typ .11 0.07 1.22 Max 225 .56 150 300 10 1.1 Unit W °C/W °C oz 050-8163 Rev D 3-2010 g in·lbf N·m Torque Mounting Torque (TO-220 Package), 4-40 or M3 screw Microsemi Website - http://www.microsemi.com Static Characteristics Symbol VBR(DSS) ∆VBR(DSS)/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS Parameter Drain-Source Breakdown Voltage TJ = 25°C unless otherwise specified Test Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 250μA APT4F120K Typ 1.41 3.42 4.2 5 250 1000 ±100 Max Unit V V/°C Ω V mV/°C μA nA Min 1200 Breakdown Voltage Temperature Coefficient Drain-Source On Resistance 3 VGS = 10V, ID = 2A VGS = VDS, ID = 0.5mA VDS = 1200V VGS = 0V TJ = 25°C TJ = 125°C 2.5 Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current 4 -10 VGS = ±30V Dynamic Characteristics Symbol Parameter Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance 4 5 TJ = 25°C unless otherwise specified Test Conditions VDS = 50V, ID = 2A VGS = 0V, VDS = 25V f = 1MHz Min Typ 4.5 1385 17 100 VGS = 0V, VDS = 0V to 800V Max Unit S gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf Symbol IS ISM VSD trr Qrr Irrm dv/dt 050-8163 Rev D 3-2010 pF Effective Output Capacitance, Charge Related Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time 40 20 43 7 20 7.4 VGS = 0 to 10V, ID = 2A, VDS = 600V nC Resistive Switching VDD = 800V, ID = 2A RG = 10Ω 6 4.4 24 6.9 ns , VGG = 15V Source-Drain Diode Characteristics Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time ISD = 2A 3 , Test Conditions MOSFET symbol showing the integral reverse p-n junction diode (body diode) Min D Typ Max 4 Unit G S A 15 0.8 170 330 .370 .820 4.90 5.40 20 1.3 195 400 V nS ISD = 2A, TJ = 25°C, VGS = 0V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C Reverse Recovery Charge diSD/dt = 100A/μs, VDD = 100V μC Reverse Recovery Current Peak Recovery dv/dt A V/ns ISD ≤ 2A, di/dt≤1000Aμs, VDD = 800V, TJ = 125°C 1 2 3 4 5 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. Starting at TJ = 25°C, L = 155.0mH, RG = 25Ω, IAS = 2A. Pulse test: Pulse Width < 380μs, duty cycle < 2%. Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -8.32E-8/VDS^2 + 3.49E-8/VDS + 1.30E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. 10 V GS APT4F120K 4.0 = 10V T = 125°C J 3.5 8 ID, DRAIN CURRENT (A) TJ = -55°C ID, DRIAN CURRENT (A) 3.0 V 6 2.5 2.0 GS = 6, 7, 8 & 9V 4 TJ = 25°C 5V 1.5 1.0 0.5 0 0 4.5V 2 TJ = 125°C TJ = 150°C 0 0 5 10 15 20 25 30 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) Figure 1, Output Characteristics 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 3.0 NORMALIZED TO VGS = 10V @ 2A 16 VDS> ID(ON) x RDS(ON) MAX. 14 ID, DRAIN CURRENT (A) 12 10 250µSEC. PULSE TEST @