APT5010JFLL

APT5010JFLL 500V 41A 0.100Ω POWER MOS 7 R FREDFET S S ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg SO "UL Recognized" ISOTOP ® • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol 27 2 T- D G D G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT5010JFLL UNIT Drain-Source Voltage 500 Volts ID Continuous Drain Current @ TC = 25°C 41 IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 378 Watts Linear Derating Factor 3.03 W/°C VDSS PD TJ,TSTG 1 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS 1 Amps 164 -55 to 150 °C 300 Amps 41 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts 35 4 mJ 1600 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 500 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 20.5A) TYP MAX UNIT Volts 0.100 Ohms Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com µA 9-2004 Characteristic / Test Conditions 050-7029 Rev E Symbol APT5010JFLL DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions Ciss Input Capacitance Coss VGS = 0V Output Capacitance VDS = 25V Crss Reverse Transfer Capacitance f = 1 MHz Qg Total Gate Charge 3 Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time RESISTIVE SWITCHING VGS = 15V VDD = 300V tf ID = 41A @ 25°C Fall Time Turn-on Switching Energy Eoff Turn-off Switching Energy INDUCTIVE SWITCHING @ 25°C 6 Eon Turn-on Switching Energy Eoff Turn-off Switching Energy ns 485 VDD = 333V, VGS = 15V 455 ID = 41A, RG = 5Ω INDUCTIVE SWITCHING @ 125°C 6 nC 3 RG = 0.6Ω Eon UNIT pF 60 95 24 50 11 13 25 ID = 41A @ 25°C Turn-off Delay Time MAX 4360 895 VDD = 300V Rise Time td(off) TYP VGS = 10V Qgs tr MIN µJ 755 VDD = 333V VGS = 15V ID = 41A, RG = 5Ω 530 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic / Test Conditions Symbol MIN TYP MAX UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 (Body Diode) 164 VSD Diode Forward Voltage 2 (VGS = 0V, IS = -41A) 1.3 Volts 15 V/ns dv/ Peak Diode Recovery dt dv/ dt 41 5 t rr Reverse Recovery Time (IS = -41A, di/dt = 100A/µs) Tj = 25°C 280 Tj = 125°C 600 Q rr Reverse Recovery Charge (IS = -41A, di/dt = 100A/µs) Tj = 25°C 2.28 Tj = 125°C 6.41 IRRM Peak Recovery Current (IS = -41A, di/dt = 100A/µs) Tj = 25°C 15.7 Tj = 125°C 23.6 Amps ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic RθJC Junction to Case RθJA Junction to Ambient MIN TYP MAX 0.33 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.9 0.7 0.20 0.5 Note: 0.15 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7029 Rev E 9-2004 0.35 0.25 0.3 0.10 0.05 0 t2 0.1 10-5 t1 Duty Factor D = t1/t2 SINGLE PULSE 0.05 10-4 °C/W 4 Starting Tj = +25°C, L = 1.65mH, RG = 25Ω, Peak IL = 41A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID41A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.30 UNIT Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves APT5010JFLL RC MODEL Junction temp. (°C) 0.0988 0.0196F Power (watts) 0.230 0.381F ID, DRAIN CURRENT (AMPERES) 120 15 &10V 8V 100 7.5V 80 7V 60 6.5V 40 6V 20 5.5V Case temperature. (°C) FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 100 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @