APT5010JLLU2
ISOTOP® Boost chopper
MOSFET Power Module
K
VDSS = 500V RDSon = 100mΩ max @ Tj = 25°C ID = 41A @ Tc = 25°C
Applicatio n • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • ISOTOP® Package (SOT-227) • Very low stray inductance • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Very rugged • Low profile • RoHS Compliant
D
G
S
S G D
K
ISOTOP
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS IFA V IFRMS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Maximum Average Forward Current Duty cycle=0.5 RMS Forward Current (Square wave, 50% duty) Tc = 25°C Tc = 80°C
mJ A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
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1–7
APT5010JLLU2 – Rev 1
Tc = 80°C
June, 2006
Tc = 25°C
Max ratings 500 41 30 164 ±30 100 378 41 50 1600 30 39
Unit V A V mΩ W A
APT5010JLLU2
Symbol IDSS RDS(on) VGS(th) IGSS Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf
All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics
Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V
Typ
Tj = 25°C Tj = 125°C 3
VGS = 10V, ID = 23A VGS = VDS, ID = 2.5mA VGS = ±20 V, VDS = 0 V Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 41A @ TJ=25°C Resistive switching @ 25°C VGS = 15V VBus = 250V ID = 41A @ TJ=25°C R G = 0.6Ω Inductive Switching @ 25°C Vbus = 330V, VGS =15V ID=46A, R G=5Ω Inductive Switching @ 125°C Vbus = 330V, VGS =15V ID=46A, R G=5Ω
Max 100 500 100 5 ±100 Max
Unit µA mΩ V nA Unit pF
Dynamic Characteristics
Min
Typ 4360 894 60 96 24 49 11 15 25 3 543 509 843 593
nC
ns
Eon Eoff Eon Eoff
Symbol VF IRM CT trr
µJ µJ
Chopper diode ratings and characteristics
Characteristic Diode Forward Voltage Maximum Reverse Leakage Current Junction Capacitance Reverse Recovery Time Reverse Recovery Time IRRM Qrr trr Qrr IRRM Maximum Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
Test Conditions IF = 30A IF = 60A IF = 30A VR = 600V VR = 600V VR = 200V IF=1A,VR=30V di/dt =100A/µs IF = 30A VR = 400V di/dt =200A/µs
Min
Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C
Typ 1.6 1.9 1.4 44 23 85 160 4 8 130 700 70 1300 30
Max 1.8 250 500
Unit V µA pF ns
A nC ns nC A
June, 2006 2–7 APT5010JLLU2 – Rev 1
IF = 30A VR = 400V di/dt =1000A/µs
www.microsemi.com
APT5010JLLU2
Thermal and package characteristics
Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt Characteristic Junction to Case Thermal Resistance Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, I isol
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