APT5010JVRU2

APT5010JVRU2 ISOTOP® Boost chopper MOSFET Power Module K VDSS = 500V RDSon = 100mΩ max @ Tj = 25°C ID = 44A @ Tc = 25°C Applicatio n • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged • ISOTOP® Package (SOT-227) • Very low stray inductance • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Very rugged • Low profile • RoHS Compliant D G S S G D K ISOTOP Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS IFA V IFRMS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Maximum Average Forward Current Duty cycle=0.5 RMS Forward Current (Square wave, 50% duty) Tc = 25°C Tc = 80°C Tc = 25°C mJ A Tc = 80°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. www.microsemi.com 1–7 APT5010JVRU2 – Rev 1 June, 2006 Max ratings 500 44 33 176 ±30 100 450 44 50 2500 30 39 Unit V A V mΩ W A APT5010JVRU2 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Min Tj = 25°C Tj = 125°C 2 Typ VGS = 10V, ID = 22A VGS = VDS, ID = 2.5mA VGS = ±20 V, VDS = 0 V Max 25 250 100 4 ±100 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 44A @ TJ=25°C VGS = 15V VBus = 250V ID = 44A @ TJ=25°C R G = 0.6Ω Min Typ 7410 1050 390 312 37 127 18 16 54 5 Max Unit pF nC ns Chopper diode ratings and characteristics Symbol VF IRM CT trr Reverse Recovery Time IRRM Qrr trr Qrr IRRM Maximum Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Characteristic Diode Forward Voltage Maximum Reverse Leakage Current Junction Capacitance Reverse Recovery Time Test Conditions IF = 30A IF = 60A IF = 30A VR = 600V VR = 600V VR = 200V IF=1A,VR=30V di/dt =100A/µs IF = 30A VR = 400V di/dt =200A/µs Min Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C Typ 1.6 1.9 1.4 44 23 85 160 4 8 130 700 70 1300 30 Max 1.8 250 500 Unit V µA pF ns A nC ns nC A www.microsemi.com 2–7 APT5010JVRU2 – Rev 1 June, 2006 IF = 30A VR = 400V di/dt =1000A/µs APT5010JVRU2 Thermal and package characteristics Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt Characteristic Junction to Case Thermal Resistance Junction to Ambient (IGBT & Diode) RMS Isolation Voltage, any terminal to case t =1 min, I isol