APT5012JN

S S D D G G 27 2 T- SO APT5010JN APT5012JN S ISOTOP® 48.0A 0.10Ω 43.0A 0.12Ω 500V 500V "UL Recognized" File No. E145592 (S) POWER MOS IV ® SINGLE DIE ISOTOP® PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT 5010JN APT 5012JN UNIT 500 500 Volts 48 43 192 172 Continuous Drain Current @ TC = 25°C 1 Amps IDM, lLM Pulsed Drain Current VGS Gate-Source Voltage ±30 Volts Total Power Dissipation @ TC = 25°C 520 Watts Linear Derating Factor 4.16 W/°C PD TJ,TSTG TL and Inductive Current Clamped -55 to 150 Operating and Storage Junction Temperature Range °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, I D = 250 µA) On State Drain Current APT5010JN 500 APT5012JN 500 APT5010JN 48 APT5012JN 43 TYP MAX UNIT Volts 2 (VDS > I D(ON) x R DS(ON) Max, VGS = 10V) Drain-Source On-State Resistance MIN 2 Amps APT5010JN 0.10 APT5012JN 0.12 Ohms (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 µA Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 4 Volts MAX UNIT Gate Threshold Voltage (VDS = VGS, I D = 2.5mA) 2 THERMAL CHARACTERISTICS Characteristic MIN RΘJC Junction to Case RΘCS Case to Sink (Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.) TYP 0.24 0.06 °C/W CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364 F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord 050-5037 Rev F Symbol DYNAMIC CHARACTERISTICS Symbol APT5010/5012JN Characteristic Test Conditions MIN TYP MAX Ciss Input Capacitance VGS = 0V 5570 6500 Coss Output Capacitance VDS = 25V 1170 1640 Crss Reverse Transfer Capacitance f = 1 MHz 440 660 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) VGS = 10V 240 370 VDD = 0.5 VDSS 32 48 ID = ID [Cont.] @ 25°C 116 170 VGS = 15V 15 30 3 Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf VDD = 0.5 VDSS 25 50 ID = ID [Cont.] @ 25°C 48 75 RG = 0.6Ω 12 25 TYP MAX Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions Continuous Source Current (Body Diode) IS MIN APT5010JN 48 APT5012JN 43 APT5010JN 192 APT5012JN 172 UNIT Amps ISM Pulsed Source Current (Body Diode) 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -ID [Cont.], dl S/dt = 100A/µs) 415 830 ns Q rr Reverse Recovery Charge (IS = -ID [Cont.], dl S/dt = 100A/µs) 8.3 16 µC TYP MAX UNIT (VGS = 0V, IS = -ID [Cont.]) 1.8 Volts PACKAGE CHARACTERISTICS Symbol Characteristic / Test Conditions MIN LD Internal Drain Inductance (Measured From Drain Terminal to Center of Die.) 3 LS Internal Source Inductance (Measured From Source Terminals to Source Bond Pads) 5 VIsolation RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) CIsolation Drain-to-Mounting Base Capacitance (f = 1MHz) Torque Maximum Torque for Device Mounting Screws and Electrical Terminations. nH 2500 Volts 35 pF 13 1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1) 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 D=0.5 0.1 0.05 0.2 0.1 0.05 0.01 0.005 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-5037 Rev F 0.3 0.02 0.01 t2 SINGLE PULSE 0.001 10-5 t1 10-4 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION in-lbs APT5010/5012JN 100 100 7V 80 60 6V 40 5V 20 ID, DRAIN CURRENT (AMPERES) 0 60 TJ = +125°C 40 20 TJ = +125°C TJ = -55°C TJ = +25°C 0 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS ID, DRAIN CURRENT (AMPERES) 50 40 APT5010JN 30 APT5012JN 20 10 0 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 25 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE TJ = +25°C BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @