APT5014SLLG/TR

APT5014BLL(G) APT5014SLL(G) 500V 35A 0.140 *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 R MOSFET D3PAK TO-247 ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS D • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package G S All Ratings: TC = 25°C unless otherwise specified. APT5014BLL-SLL(G) Parameter 500 Drain-Source Voltage UNIT Volts ID Continuous Drain Current @ TC = 25°C IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 403 Watts Linear Derating Factor 3.22 W/°C PD TJ,TSTG 1 Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy 1 Amps 140 TL EAS 35 -55 to 150 °C 300 Amps 35 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts 30 4 mJ 1300 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 500 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, 17.5A) TYP MAX Volts 0.140 Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) 100 Zero Gate Voltage Drain Current (V DS = 400V, VGS = 0V, TC = 125°C) 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) UNIT Ohms µA ±100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT5014 BLL - SLL(G) APT5014 BLL - SLL DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic MIN TYP C iss Input Capacitance Coss Output Capacitance VDS = 25V 704 Reverse Transfer Capacitance f = 1 MHz 50 VGS = 10V 72 VDD = 250V 20 Crss Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr ID = 35A @ 25°C td(off) tf 6 VDD = 250V RG = 1.6 Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 3 INDUCTIVE SWITCHING @ 25°C 6 325 VDD = 333V, VGS = 15V 249 ID = 35A, RG = 5 INDUCTIVE SWITCHING @ 125°C 6 ns 23 ID = 35A @ 25°C Fall Time nC 11 VGS = 15V Turn-off Delay Time pF 36 RESISTIVE SWITCHING Rise Time UNIT 3261 VGS = 0V 3 MAX µJ 545 VDD = 333V, VGS = 15V ID = 35A, RG = 5 288 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS MIN Characteristic / Test Conditions TYP MAX 35 Continuous Source Current (Body Diode) 140 ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -35A, dl S /dt = 100A/µs) 510 Q rr Reverse Recovery Charge (IS = -35A, dl S /dt = 100A/µs) 10 dv/ dt Peak Diode Recovery dv/ (Body Diode) 1.3 (VGS = 0V, IS = -35A) dt UNIT Amps Volts ns µC 8 V/ns MAX UNIT 5 THERMAL CHARACTERISTICS Symbol R R MIN Characteristic TYP 0.31 JC Junction to Case JA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 2.12mH, RG = 25 , Peak IL = 35A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -35A di/dt 700A/µs VR 500V TJ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.35 0.30 0.9 0.25 0.7 0.20 0.5 0.15 Note: t1 0.3 0.10 t2 0.05 0 SINGLE PULSE 0.1 0.05 10-5 10-4 °C/W Duty Factor D = t1/t2 Peak TJ = PDM x Z JC + TC 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves APT5014 BLL - SLL(G) APT5014 BLL_SLL 100 15 &10V 8V 80 RC MODEL Junction temp. ( C) 60 0.119 7V 0.0135F Power (watts) 6.5V 20 0.191 0.319F 6V 20 5.5V 5V Case temperature. ( C) 0 FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.2 100 V NORMALIZED TO = 10V @ 17.5A GS 1.15 80 1.10 VGS=10V 60 1.05 40 1.0 TJ = +25°C 20 0 VGS=20V TJ = +125°C 0.95 TJ = -55°C 0 1 2 3 4 5 6 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 0.90 0 1.15 35 30 10 20 30 40 50 60 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.10 25 1.05 20 1.00 15 0.95 10 0.90 5 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 I D V 2.0 0.85 -50 = 17.5A GS = 10V 1.1 1.0 1.5 0.9 1.0 0.8 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE Typical Performance Curves APT5014 BLL - SLL(G) APT5014 BLL_SLL 10,000 140 OPERATION HERE LIMITED BY RDS (ON) Ciss 50 100µS 1,000 Coss 10 1mS Crss TC =+25°C TJ =+150°C SINGLE PULSE 1 100 10mS 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16 10 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 I D = 35A 14 100 12 50 VDS=100V 10 VDS=250V 8 TJ =+150°C TJ =+25°C VDS=400V 10 6 5 4 2 0 0 20 40 60 80 100 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 70 60 V = 333V DD td(off) 50 G =5 T = 125°C J 40 V DD R G = 333V =5 tf L = 100µH 50 40 T = 125°C J 30 L = 100µH 30 20 20 tr td(on) 10 0 R 60 0 1000 10 10 30 40 50 60 ID (A) FIGURE 14, DELAY TIMES vs CURRENT V DD R G 20 0 30 40 50 60 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 1400 = 333V 10 V DD =5 I 1200 T = 125°C J 800 0 D 20 = 333V = 35A T = 125°C J L = 100µH 1000 EON includes Eoff L = 100µH E ON includes diode reverse recovery. diode reverse recovery. 600 800 Eon Eon 600 400 400 200 0 Eoff 0 10 20 30 40 50 60 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 200 0 0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE Typical Performance Curves APT5014 BLL_SLL(G) Gate Voltage 10 % T = 125 C J td(on) 90% Gate Voltage td(off) tr Drain Voltage 90% 5% T = 125 C J Drain Current 90% tf 10 % 10% 0 Drain Voltage Switching Energy Drain Current Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions APT30DF60 V DS ID V DD G D.U.T. Figure 20, Inductive Switching Test Circuit 3 TO-247 Package Outline D PAK Package Outline e3 100% Sn Plated e1 SAC: Tin, Silver, Copper 5.31 (.209) 16.26 (.640) 2.49 (.098) 6.15 (.242) BSC 6.20 (.244) 21.46 (.845) 3.81 (.150) 4.50 (.177) Max. 0.79 (.031) 2.13 (.084) 20.32 (.800) 1.40 (.055) 2.59 (.102) 3.12 (.123) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Gate Drain Source