APT5022BNG

D TO-247 G S POWER MOS IV ® APT5020BN 500V 28.0A 0.20Ω APT5022BN 500V 27.0A 0.22Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT 5020BN APT 5022BN UNIT 500 500 Volts 28 27 112 108 Continuous Drain Current @ TC = 25°C Amps 1 IDM Pulsed Drain Current VGS Gate-Source Voltage ±30 Volts Total Power Dissipation @ TC = 25°C 360 Watts Linear Derating Factor 2.9 W/°C PD TJ,TSTG TL -55 to 150 Operating and Storage Junction Temperature Range °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Current APT5020BN 500 APT5022BN 500 APT5020BN 28 APT5022BN 27 TYP MAX UNIT Volts 2 (VDS > I D(ON) x R DS(ON) Max, VGS = 10V) Drain-Source On-State Resistance MIN 2 Amps APT5020BN 0.20 APT5022BN 0.22 Ohms (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 µA Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 4 Volts MAX UNIT Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) 2 THERMAL CHARACTERISTICS Characteristic RθJC Junction to Case RθJA Junction to Ambient MIN TYP 0.34 40 °C/W CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364 F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord 050-5008 Rev C Symbol DYNAMIC CHARACTERISTICS Symbol APT5020/5022BN Characteristic MIN Test Conditions TYP MAX Ciss Input Capacitance VGS = 0V 2890 3500 Coss Output Capacitance VDS = 25V 590 830 Crss Reverse Transfer Capacitance f = 1 MHz 230 350 Qg Total Gate Charge Qgs 3 VGS = 10V 140 210 VDD = 0.5 VDSS 18 27 ID = ID [Cont.] @ 25°C 75 110 38 Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr VGS = 15V 19 VDD = 0.5 VDSS 43 86 ID = ID [Cont.] @ 25°C 85 125 RG = 1.8Ω 56 112 TYP MAX Rise Time td(off) Turn-off Delay Time tf Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic / Test Conditions / Part Number Symbol Continuous Source Current (Body Diode) IS ISM Pulsed Source Current (Body Diode) 1 VSD Diode Forward Voltage 2 MIN APT5020BN 28 APT5022BN 27 APT5020BN 112 APT5022BN 108 (VGS = 0V, IS = -ID [Cont.]) 1.3 t rr Reverse Recovery Time (IS = -ID [Cont.], dl S/dt = 100A/µs) Q rr Reverse Recovery Charge (IS = -ID [Cont.], dl S/dt = 100A/µs) UNIT Amps Volts 215 430 860 ns 3 7 14 µC Test Conditions / Part Number MIN TYP MAX UNIT SAFE OPERATING AREA CHARACTERISTICS Symbol Characteristic SOA1 Safe Operating Area VDS = 0.4 VDSS, IDS = PD / 0.4 VDSS, t = 1 Sec. 360 SOA2 Safe Operating Area IDS = ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec. 360 ILM Inductive Current Clamped APT5020BN 112 APT5022BN 108 Watts Amps 1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1) 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. D=0.5 0.1 0.05 0.2 0.1 0.05 0.01 0.02 Note: 0.01 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-5008 Rev C 0.5 0.005 t1 t2 SINGLE PULSE 0.001 10-5 10-4 Duty Factor D = t1/t 2 Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION APT5020/5022BN 20 20 VGS=10V ID, DRAIN CURRENT (AMPERES) 16 6V 12 5.5V 8 5V 4 8V 16 7V 5.5V 8 5V 4 4.5V 0 TJ = +25°C TJ = +125°C VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @