APT50DL60BCT

APT50DL60BCT(G) 600V 50A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode PRODUCT APPLICATIONS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Applications - Induction Heating • Resonant Mode Circuits -ZVS and ZCS Topologies - Phase Shifted Bridge PRODUCT FEATURES • Ultrasoft Recovery Times (trr) • Popular TO-247 Package or Surface Mount D3PAK Package • Ultra Low Forward Voltage • Low Leakage Current PRODUCT BENEFITS • Soft Switching - High Qrr • Low Noise Switching - Reduced Ringing • Higher Reliability Systems • Minimizes or eliminates snubber 1 3 2 1 - Anode 1 2 - Common Cathode Back of Case - Cathode 3 - Anode 2 MAXIMUM RATINGS Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM TJ, TSTG TL All Ratings per leg : TC = 25°C unless otherwise specified. Ratings Unit Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward current (TC = 115°C, Duty Cycle = 0.5) RMS Forward Currrent (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3 ms) Operating and Storage Junction Temperature Range Lead Temperature for 10 Seconds 600 Volts 50 150 320 -55 to 175 °C 300 Amps STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions IF = 50A VF Forward Voltage IF = 100A IF = 50A, TJ = 125°C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V VR = 600V VR = 600V, TJ = 125°C 51 Min Typ 1.25 2.0 1.25 Max 1.6 Unit Volts 25 250 pF 052-6316 Rev B 12 - 2008 μA Microsemi Website - http://www.microsemi.com DYNAMIC CHARACTERISTICS Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM APT50DL60BCT(G) Min Typ 52 ns 399 IF = 50A, diF/dt = -200A/μs VR = 400V, TC = 25°C 1498 9 449 IF = 50A, diF/dt = -200A/μs VR = 400V, TC = 125°C 3734 15 284 IF = 50A, diF/dt = -1000A/μs VR = 400V, TC = 125°C 5134 34 nC Amps ns nC Amps ns nC Amps Characteristic / Test Conditions Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C Max Unit THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC WT Characteristic / Test Conditions Junction-to-Case Thermal Resistance Min Typ Max 0.63 Unit °C/W oz g 0.22 Package Weight 5.9 10 Torque Maximum Mounting Torque 1.1 Microsemi reserves the right to change, without notice, the specifications and information contained herein. lb·in N·m 0.7 ZθJC, THERMAL IMPEDANCE (°C/W) 0.6 0.5 0.4 0.3 0.2 0.1 0 Note: PDM t1 t2 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC t 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION TJ (°C) 052-6316 Rev B 12 - 2008 0.316 Dissipated Power (Watts) TC (°C) 0.312 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. 0.0046 0.1483 FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL ZEXT TYPICAL PERFORMANCE CURVES 120 TJ= 125°C 100 IF, FORWARD CURRENT (A) TJ= 55°C 80 TJ= 25°C 60 40 20 0 TJ= 150°C trr, COLLECTOR CURRENT (A) 700 100A 600 500 400 300 200 100 0 25A APT50DL60BCT(G) T = 125°C J V = 400V R 50A 0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) FIGURE 2, Forward Current vs. Forward Voltage T = 125°C J V = 400V R 0 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 3, Reverse Recovery Time vs. Current Rate of Change 45 IRRM, REVERSE RECOVERY CURRENT (A) T = 125°C J V = 400V R Qrr, REVERSE RECOVERY CHARGE (nC) 8000 7000 6000 5000 4000 3000 2000 1000 100A 40 35 30 25 20 15 10 5 0 50A 100A 50A 25A 25A 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change 1.2 1.0 0.8 0.6 0.4 0.2 0 tRR IRRM 0 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 5, Reverse Recovery Current vs. Current Rate of Change 140 120 100 IF(AV) (A) 80 60 40 20 0 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/μs) QRR Duty cycle = 0.5 TJ = 126°C 0 25 50 75 100 125 150 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) FIGURE 6, Dynamic Parameters vs Junction Temperature 500 CJ, JUNCTION CAPACITANCE (pF) Case Temperature (°C) FIGURE 7, Maximum Average Forward Current vs. Case Temperature 450 400 350 300 052-6316 Rev B 12 - 2008 250 200 150 100 50 10 100 400 VR, REVERSE VOLTAGE (V) FIGURE 8, Junction Capacitance vs. Reverse Voltage 0 0 Vr +18V 0V D.U.T. diF /dt Adjust APT50DL60BCT(G) trr/Qrr Waveform CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 2 3 4 IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero 1 4 6 5 3 2 0.25 IRRM Slope = diM/dt trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr. 5 6 Figure 10, Diode Reverse Recovery Waveform and Definitions TO-247 (BCT) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Common Cathode 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 052-6316 Rev B 12 - 2008 Anode 1 Common Cathode Anode 2 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.