APT50GN60BG

TYPICAL PERFORMANCE CURVES APT50GN60B APT50GN60B_S(G) APT50GN60S APT50GN60B(G) APT50GN60S(G) 600V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses. G C E (B) TO -2 47 D3PAK (S) C G E • 600V Field Stop • • • • Trench Gate: Low VCE(on) Easy Paralleling 6µs Short Circuit Capability 175°C Rated C G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current 8 All Ratings: TC = 25°C unless otherwise specified. APT50GN60B(G) UNIT Volts 600 ±30 @ TC = 25°C 107 64 150 150A @ 600V 366 -55 to 175 300 °C Watts Amps Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 @ TC = 175°C Switching Safe Operating Area @ TJ = 175°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) Gate Threshold Voltage (VCE = VGE, I C = 800µA, Tj = 25°C) MIN TYP MAX Units 600 5.0 1.05 5.8 1.45 1.7 25 2 6.5 1.85 Volts Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125°C) I CES I GES RG(int) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 µA nA Ω 7-2009 050-7612 Rev C Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V) Intergrated Gate Resistor TBD 600 N/A CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA SCSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT50GN60B_S(G) Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 300V I C = 50A TJ = 175°C, R G = 4.3Ω 7, MIN TYP MAX UNIT 3200 125 100 9.0 325 25 175 VGE = nC V pF Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area 15V, L = 100µH,VCE = 600V VCC = 360V, VGE = 15V, TJ = 150°C, R G = 4.3Ω 7 Inductive Switching (25°C) VCC = 400V VGE = 15V I C = 50A 150 6 20 25 230 100 1185 1275 1565 20 25 260 140 1205 1850 2125 A Short Circuit Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 5 µs ns RG = 4.3Ω 7 TJ = +25°C Turn-on Switching Energy (Diode) Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 44 6 µJ Inductive Switching (125°C) VCC = 400V VGE = 15V I C = 50A RG = 4.3Ω 7 55 ns Turn-on Switching Energy (Diode) Turn-off Switching Energy 66 TJ = +125°C µJ THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC RθJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT °C/W gm .41 N/A 5.9 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 7-2009 Rev C 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) 8 Continuous current limited by package lead temperature. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 050-7612 TYPICAL PERFORMANCE CURVES 160 V GE APT50GN60B_S(G) 200 180 IC, COLLECTOR CURRENT (A) 160 140 120 100 80 60 9V 40 20 0 8V 7V 0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 11V 10V 15V 13V 12V = 15V 140 IC, COLLECTOR CURRENT (A) 120 100 80 TJ = 25°C 60 40 20 0 TJ = -55°C TJ = 175°C TJ = 125°C 0 1 2 3 4 5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 250µs PULSE TEST