APT50M60L2VFR

APT50M60L2VFR 500V 77A 0.060Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. TO-264 Max • TO-264 MAX Package • Faster Switching • Lower Leakage MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage • Avalanche Energy Rated • FAST RECOVERY BODY DIODE G D S All Ratings: TC = 25°C unless otherwise specified. APT50M60L2VFR UNIT Volts Amps 500 77 308 ±30 ±40 833 6.67 -55 to 150 300 77 50 4 1 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 3200 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 500 0.060 250 1000 ±100 2 4 (VGS = 10V, ID = 38.5A) Ohms µA nA Volts 5-2004 050-5989 Rev A Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD dv/ dt APT50M60L2VFR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 250V ID = 77A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 250V ID = 77A @ 25°C RG = 0.6Ω 6 INDUCTIVE SWITCHING @ 25°C VDD = 333V, VGS = 15V ID = 77A, RG = 5Ω 6 INDUCTIVE SWITCHING @ 125°C VDD = 333V, VGS = 15V ID = 77A, RG = 5Ω Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 MIN TYP MAX UNIT pF 10600 1800 795 560 70 285 20 25 80 8 1510 3450 2065 3830 MIN TYP MAX Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery 1 2 nC ns µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS UNIT Amps Volts V/ns ns µC Amps 77 308 1.3 15 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C MIN (Body Diode) (VGS = 0V, IS = -77A) d v/ 5 dt t rr Q rr IRRM Reverse Recovery Time (IS = -77A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -77A, di/dt = 100A/µs) Peak Recovery Current (IS = -77A, di/dt = 100A/µs) Characteristic Junction to Case Junction to Ambient 300 600 2.6 10 17 34 TYP MAX THERMAL CHARACTERISTICS Symbol RθJC RθJA UNIT °C/W 0.15 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.16 Z JC, THERMAL IMPEDANCE (°C/W) θ 4 Starting Tj = +25°C, L = 1.08mH, RG = 25Ω, Peak IL = 77A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID77A di/dt ≤ 700A/µs VR ≤ 500V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.14 0.12 0.9 0.7 0.10 0.08 0.06 0.3 0.04 0.02 0 10-5 0.1 0.05 10-4 0.5 Note: PDM t1 t2 050-5989 Rev A 5-2004 SINGLE PULSE Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t2 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves ID, DRAIN CURRENT (AMPERES) 200 180 160 140 120 100 80 60 40 20 0 APT50M60L2VFR VGS =15 & 10V 8V RC MODEL Junction temp. (°C) 0.0545 Power (watts) 0.0957 Case temperature. (°C) 0.922F 0.0487F 7.5V 7V 6.5V 6V 5.5V FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 140 ID, DRAIN CURRENT (AMPERES) 120 100 80 60 40 20 0 VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @