APT50M75JLLU2
ISOTOP® Boost chopper
MOSFET Power Module
K
VDSS = 500V RDSon = 75mΩ max @ Tj = 25°C ID = 51A @ Tc = 25°C
Applicatio n • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • ISOTOP® Package (SOT-227) • Very low stray inductance • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Very rugged • Low profile • RoHS Compliant
D
G
S
S G D
K
ISOTOP
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS IFA V IFRMS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Maximum Average Forward Current Duty cycle=0.5 RMS Forward Current (Square wave, 50% duty) Tc = 25°C Tc = 80°C
mJ A
Tc = 80°C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
www.microsemi.com
1–8
APT50M75JLLU2 – Rev 1
June, 2006
Tc = 25°C
Max ratings 500 51 39 204 ±30 75 290 51 50 2500 30 39
Unit V A V mΩ W A
APT50M75JLLU2
All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions
VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V
Min Tj = 25°C Tj = 125°C 3
Typ
VGS = 10V, ID = 25.5A VGS = VDS, ID = 1 mA VGS = ±20 V, VDS = 0 V
Max 100 500 75 5 ±100
Unit µA mΩ V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 51A Resistive Switching VGS = 15V VBus = 250V ID = 51A R G = 0.6Ω Inductive switching @ 25°C VGS = 15V, VBus = 330V ID = 51A, R G = 5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 330V ID = 51A, R G = 5 Ω
Min
Typ 5590 1180 85 123 33 65 10 20 21 5 755 726 1241 846
Max
Unit pF
nC
ns
µJ
µJ
www.microsemi.com
2–8
APT50M75JLLU2 – Rev 1
June, 2006
APT50M75JLLU2
Chopper diode ratings and characteristics
Symbol VF IRM CT trr Reverse Recovery Time IRRM Qrr trr Qrr IRRM Maximum Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 30A VR = 400V di/dt =1000A/µs IF = 30A VR = 400V di/dt =200A/µs Characteristic Diode Forward Voltage Maximum Reverse Leakage Current Junction Capacitance Reverse Recovery Time Test Conditions IF = 30A IF = 60A IF = 30A VR = 600V VR = 600V VR = 200V IF=1A,VR=30V di/dt =100A/µs Min Typ 1.6 1.9 1.4 44 Tj = 25°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C 23 85 160 4 8 130 700 70 1300 30 ns Max 1.8 250 500 Unit V µA pF
Tj = 125°C Tj = 25°C Tj = 125°C
A nC ns nC A
Thermal and package characteristics
Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt Characteristic Junction to Case Thermal Resistance Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, I isol
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