APT50N60JCU2

APT50N60JCU2 ISOTOP® Boost chopper Super Junction MOSFET Power Module K VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 52A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch Features D G • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated ISOTOP® Package (SOT-227) Very low stray inductance High level of integration S • • • S D K Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant G Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 600 52 38 130 ±20 45 290 15 3 1900 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. www.microsemi.com 1-6 APT50N60JCU2 – Rev 2 April, 2008 Tc = 25°C APT50N60JCU2 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Tj = 25°C Tj = 125°C 2.1 Typ VGS = 10V, ID = 22.5A VGS = VDS, ID = 3mA VGS = ±20 V, VDS = 0V 40 3 Max 250 500 45 3.9 100 Unit µA mΩ V nA Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff VSD trr Qrr Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Test Conditions VGS = 0V ; VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 49A Inductive Switching (125°C) VGS = 10V VBus = 400V ID = 49A RG = 5Ω Inductive switching @ 25°C VGS = 10V ; VBus = 400V ID = 49A ; RG = 5Ω Inductive switching @ 125°C VGS = 10V ; VBus = 400V ID = 49A ; RG = 5Ω VGS = 0V, IS = - 49A IS = - 49A Tj = 25°C VR = 400V Tj = 25°C diS/dt = 100A/µs Min Typ 7.2 8.5 150 34 51 21 30 100 45 675 520 1100 635 0.9 600 17 1.2 V ns µC µJ µJ ns nC Max Unit nF www.microsemi.com 2-6 APT50N60JCU2 – Rev 2 April, 2008 APT50N60JCU2 Chopper diode ratings and characteristics Symbol VRRM VF IRM CT trr Reverse Recovery Time IRRM Qrr trr Qrr IRRM Maximum Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 30A VR = 400V di/dt =1000A/µs IF = 30A VR = 400V di/dt =200A/µs Characteristic Max. Peak Repetitive Reverse Voltage Diode Forward Voltage Maximum Reverse Leakage Current Junction Capacitance Reverse Recovery Time Test Conditions IF = 30A IF = 60A IF = 30A VR = 600V VR = 200V IF=1A,VR=30V di/dt =100A/µs Min 600 Typ 1.8 2 1.3 Max 2.2 V 100 500 36 Tj = 25°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C 22 25 160 3 6 35 480 85 920 20 ns µA pF Unit V Tj = 125°C Tj = 25°C Tj = 125°C A nC ns nC A Thermal and package characteristics Symbol Characteristic RthJC RthJA VISOL TJ,TSTG TL Torque Wt Junction to Case Thermal Resistance Junction to Ambient (IGBT & Diode) RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 6.5V 6V 5.5V RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 60 50 40 30 20 10 0 25 50 75 100 125 TC, Case Temperature (°C) 150 www.microsemi.com 4-6 APT50N60JCU2 – Rev 2 April, 2008 APT50N60JCU2 RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.1 VGS(TH), Threshold Voltage (Normalized) 1.0 0.9 0.8 0.7 0.6 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 Coss C, Capacitance (pF) 10000 Ciss 1000 ID, Drain Current (A) ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS=10V ID= 50A 100 limited by RDSon 100 µs 10 Single pulse TJ=150°C TC=25°C 1 ms 10 ms 1 1 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 12 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 Gate Charge (nC) VDS=480V ID=50A TJ=25°C VDS=120V VDS=300V 1000 Crss 100 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 5-6 APT50N60JCU2 – Rev 2 April, 2008 APT50N60JCU2 140 120 td(on) and td(off) (ns) Delay Times vs Current 70 td(off) VDS=400V RG=5Ω TJ=125°C L=100µH td(on) Rise and Fall times vs Current 60 tr and tf (ns) 50 40 30 20 10 0 tr VDS=400V RG=5Ω TJ=125°C L=100µH 100 80 60 40 20 0 0 10 20 30 40 50 tf 60 70 80 0 10 20 30 40 50 60 70 80 ID, Drain Current (A) Switching Energy vs Current 2 Switching Energy (mJ) 1.6 1.2 Eoff 0.8 0.4 0 0 10 20 30 40 50 60 ID, Drain Current (A) 70 80 VDS=400V RG=5Ω TJ=125°C L=100µH ID, Drain Current (A) Switching Energy vs Gate Resistance 2.5 Switching Energy (mJ) 2 1.5 1 0.5 0 0 10 20 30 40 50 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 VDS=400V ID=50A TJ=125°C L=100µH Eon Eoff Eon Operating Frequency vs Drain Current ZVS VDS=400V D=50% RG=5Ω TJ=125°C TC=75°C 250 Frequency (kHz) 200 150 100 50 0 5 hard switching ZCS IDR, Reverse Drain Current (A) 300 100 TJ=150°C 10 TJ=25°C 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) 10 15 20 25 30 35 40 45 50 ID, Drain Current (A) ISOTOP® is a registered trademark of ST Microelectronics NV COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APT50N60JCU2 – Rev 2 April, 2008