APT53N60SC6

APT53N60BC6 APT53N60SC6 600V 53A 0.070Ω C OLMOS O Power Semiconductors Super Junction MOSFET TO -2 47 • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated • Popular TO-247 or Surface Mount D3 package. D3PAK D G S MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current 1 All Ratings per die: TC = 25°C unless otherwise specified. APT53N60B_SC6 600 53 34 159 ±20 417 - 55 to 150 260 9.3 2 UNIT Volts Amps Gate-Source Voltage Continuous Total Power Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 2 Volts Watts °C Amps mJ Repetitive Avalanche Energy ( Id =9.3A, Vdd = 50V ) ( Id = 9.3A, Vdd = 50V ) 1.72 1135 Single Pulse Avalanche Energy STATIC ELECTRICAL CHARACTERISTICS Symbol BV(DSS) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) Drain-Source On-State Resistance 3 MIN 600 TYP MAX UNIT Volts (VGS = 10V, ID = 25.8A) 0.070 25 250 ±100 2.5 3 3.5 Ohms μA nA Volts 8-2010 050-7206 Rev B Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C) Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.72mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. "COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG." Microsemi Website - http://www.microsemi.com DYNAMIC CHARACTERISTICS Symbol Characteristic Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 4 APT53N60B_SC6 Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 53A @ 25°C INDUCTIVE SWITCHING VGS = 15V VDD = 400V ID = 53A @ 125°C RG = 4.3Ω 5 MIN TYP 4020 3545 330 154 26 82 14 36 151 74 960 873 1478 995 MAX UNIT pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy 5 nC ns INDUCTIVE SWITCHING @ 25°C VDD = 400V, VGS = 15V ID = 53A, RG = 4.3Ω INDUCTIVE SWITCHING @ 125°C VDD = 400V, VGS = 15V ID = 53A, RG = 4.3Ω μJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD dv Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 3 MIN TYP MAX 46 159 UNIT Amps Volts V/ns ns μC Amps (Body Diode) (VGS = 0V, IS = -53A) 6 0.9 1.2 15 /dt Peak Diode Recovery dv/dt Reverse Recovery Time (IS = -53A, di/dt = 100A/ μs) t rr Q rr IRRM Tj = 25°C Tj = 25°C Tj = 25°C 795 25 58 Reverse Recovery Charge (IS = -53A, di/dt = 100A/ μs) Peak Recovery Current (IS = -53A, di/dt = 100A/ μs) THERMAL CHARACTERISTICS Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX 0.30 40 UNIT °C/W 4 See MIL-STD-750 Method 3471 2 Repetitive avalanche causes additional power losses that can be calculated as 5 Eon includes diode reverse recovery. PAV = EAR*f . Pulse width tp limited by Tj max. 6 Maximum 125°C diode commutation speed = di/dt 600A/μs 3 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2% Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.35 ZθJC, THERMAL IMPEDANCE (°C/W) 0.30 0.25 0.20 0.15 0.10 0.05 0 0.3 D = 0.9 1 Repetitive Rating: Pulse width limited by maximum junction temperature 0.7 0.5 Note: 8-2010 PDM t1 t2 050-7206 Rev B 0.1 0.05 10-5 10-4 SINGLE PULSE 10-3 10-2 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC t 0.1 1 RECTANGULAR PULSE DURATION (SECONDS) Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration Typical Performance Curves 140 120 IC, DRAIN CURRENT (A) 100 80 60 40 20 0 ID, DRAIN CURRENT (A) 7.0V 6.5V 6.0V 5.5V 5V 4.5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 2, Low Voltage Output Characteristics NORMALIZED TO V GS APT53N60B_SC6 80 10V 70 60 50 40 30 20 10 0 0 TJ= 25°C TJ= 125°C TJ= -55°C VDS> ID (ON) x RDS (ON)MAX. 250 μSEC. PULSE TEST @