APT54GA60S

APT54GA60B APT54GA60S 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved TO APT54GA60S -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even APT54GA60B when switching at high frequency. Single die IGBT ® FEATURES • Fast switching with low EMI • Very Low Eoff for maximum efficiency • Ultra low Cres for improved noise immunity • Low conduction loss • Low gate charge • Increased intrinsic gate resistance for low EMI • RoHS compliant TYPICAL APPLICATIONS • ZVS phase shifted and other full bridge • Half bridge • High power PFC boost • Welding • UPS, solar, and other inverters • High frequency, high efficiency industrial Absolute Maximum Ratings Symbol Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG TL Parameter Collector Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current Gate-Emitter Voltage 2 Total Power Dissipation @ TC = 25°C Switching Safe Operating Area @ TJ = 150°C Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" from Case for 10 Seconds 1 Ratings 600 96 54 161 ±30 416 161A @ 600V -55 to 150 300 Unit V A V W °C Static Characteristics Symbol VBR(CES) VCE(on) VGE(th) ICES IGES TJ = 25°C unless otherwise specified Test Conditions VGE = 0V, IC = 1.0mA VGE = 15V, IC = 32A VCE = 600V, VGE = 0V TJ = 25°C TJ = 125°C 3 TJ = 25°C TJ = 125°C Parameter Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Min 600 Typ 2.0 1.9 4.5 Max 2.5 6 250 2500 ±100 Unit V VGE =VCE , IC = 1mA μA nA 6 - 2009 052-6328 Rev D VGS = ±30V Thermal and Mechanical Characteristics Symbol RθJC WT Torque Characteristic Junction to Case Thermal Resistance Package Weight Mounting Torque (TO-247 Package), 4-40 or M3 screw Min - Typ 5.9 Max .3 - Unit °C/W g in·lbf 10 Microsemi Website - http://www.microsemi.com Dynamic Characteristics Symbol Cies Coes Cres Qg3 Qge Qgc SSOA td(on) tr td(off) tf Eon2 Eoff6 td(on tr td(off) tf Eon2 Eoff6 TJ = 25°C unless otherwise specified Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 300V IC = 32A TJ = 150°C, RG = 4.7Ω4, VGE = 15V, L= 100uH, VCE = 600V Inductive Switching (25°C) VCC = 400V VGE = 15V IC = 32A RG = 4.7Ω4 TJ = +25°C Inductive Switching (125°C) VCC = 400V VGE = 15V IC = 32A RG = 4.7Ω4 TJ = +125°C 161 17 20 112 86 534 466 16 21 146 145 891 838 APT54GA60B_S Min Typ 4130 350 45 158 26 52 A nC pF Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Max Unit ns μJ ns μJ 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 3 See Mil-Std-750 Method 3471 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 052-6328 Rev D 6 - 2009 Typical Performance Curves 100 V GE APT54GA60B_S 350 TJ= 25°C 300 IC, COLLECTOR CURRENT (A) 250 200 8V 150 100 50 0 7V 6V 5V 04 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25°C) I = 32A C T = 25°C J = 15V IC, COLLECTOR CURRENT (A) TJ= 55°C 75 15V 13V 10V 9V TJ= 125°C TJ= 150°C 50 25 0 0 2 4 6 8 200 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25°C) VGE, GATE-TO-EMITTER VOLTAGE (V) 250 μs PULSE TEST