APT58M50JCU3

APT58M50JCU3 ISOTOP® Buck chopper MOSFET + SiC chopper diode Power module D VDSS = 500V RDSon = 65mΩ Max @ Tj = 25°C ID = 58A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies Features G S • Power MOS 8™ MOSFET - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated A • SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • • • ISOTOP® Package (SOT-227) Very low stray inductance High level of integration S D A G ISOTOP® Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25°C Tc = 80°C Max ratings 500 58 43 270 ±30 65 543 42 Unit V A V mΩ W A APT58M50JCU3 – Rev 0 September, 2009 Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APT58M50JCU3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Tj = 25°C VDS = 500V VGS = 0V Tj = 125°C VGS = 10V, ID = 42A VGS = VDS, ID = 2.5mA VGS = ±30 V Min Typ Max 250 1000 65 5 ±100 Unit µA mΩ V nA 3 4 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 42A Resistive switching @ 25°C VGS = 15V VBus = 333V ID = 42A RG = 2.2Ω Min Typ 10800 1164 148 340 75 155 60 70 155 50 ns nC Max Unit pF SiC chopper diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC C Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance IF = 20A Test Conditions VR=600V Tj = 25°C Tj = 175°C Tc = 100°C Tj = 25°C Tj = 175°C Min 600 Typ 100 200 20 1.6 2 28 130 100 Max 400 2000 1.8 2.4 Unit V µA A V nC pF IF = 20A, VR = 300V di/dt =800A/µs f = 1MHz, VR = 200V f = 1MHz, VR = 400V Thermal and package characteristics RthJC RthJA VISOL TJ,TSTG TL Torque Wt Junction to Case Thermal Resistance Junction to Ambient (IGBT & Diode) RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle TJ=125°C TJ=125°C 5.5V 6V VGS=7,8 &10V 6.5V TJ=125°C 2 1.5 1 0.5 25 50 75 100 125 150 0 0 1 2 3 4 5 6 7 TJ, Junction Temperature (°C) Gate Charge vs Gate to Source 12 VGS, Gate to Source Voltage 10 8 6 4 2 0 0 60 120 180 240 300 360 Gate Charge (nC) 10 0 VDS=400V ID=42A TJ=25°C VDS=100V VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) Ciss VDS=250V 10000 1000 Coss Crss 100 50 100 150 200 APT58M50JCU3 – Rev 0 September, 2009 VDS, Drain to Source Voltage (V) www.microsemi.com 4-5 APT58M50JCU3 Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 Thermal Impedance (°C/W) 1.2 1 0.8 0.6 0.3 0.4 0.2 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.7 0.5 0.9 Rectangular Pulse Duration (Seconds) Forward Characteristics Reverse Characteristics 400 TJ=25°C 40 IF Forward Current (A) IR Reverse Current (µA) 350 300 250 200 150 100 50 0 200 300 400 TJ=175°C 30 TJ=75°C TJ=175°C TJ=125°C TJ=75°C 20 TJ=125°C 10 TJ=25°C 0 0 0.5 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) Capacitance vs.Reverse Voltage 500 600 700 800 VR Reverse Voltage (V) 800 C, Capacitance (pF) 600 400 200 0 APT58M50JCU3 – Rev 0 September, 2009 1 10 100 VR Reverse Voltage 1000 ISOTOP® is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5