APT5SM170B

PRELIMINARY APT5SM170B PRELIMINARY 1700V, 5A, 0.95Ω Package APT5SM170B Silicon Carbide N-Channel Power MOSFET TO -24 7 DESCRIPTION Silicon carbide (SiC) power MOSFET product line from Microsemi increase your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage applications. D G S FEATURES / TYPICAL APPLICATIONS SiC MOSFET Features: SiC MOSFET Benefits: Applications: • Low capacitances and low gate charge • High efficiency to enable lighter/compact system • PV inverter, converter and industrial motor drives • Simple to drive and easy to parallel • Smart grid transmission & distribution • Stable operation at high junction temperature, Tj(max) = +175C • Improved thermal capabilities and lower switching losses • Induction heating, and welding • Fast and reliable body diode • Eliminates the need of external Free Wheeling Diode • Power supply and distribution • Fast switching speed due to low internal gate resistance (ESR) • H/EV powertrain and EV charger • Lower system cost of ownership MAXIMUM RATINGS Symbol VDSS ID Parameter Drain Source Voltage Unit 1700 V Continuous Drain Current @ TC = 25°C 5 Continuous Drain Current @ TC = 100°C 3.5 IDM Pulsed Drain Current VGS Gate-Source Voltage PD Ratings A 8 1 Total Power Dissipation @ TC = 25°C Linear Derating Factor -10 to +25 V 65 W 0.43 W/°C THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC Characteristic Min Junction to Case Thermal Resistance Typ Max Unit 1.7 2.3 °C/W Operating Junction Temperature -55 175 Tstg Storage Junction Temperature Range -55 150 TL Soldering Temperature for 10 Seconds (1.6mm from case) Tj Torque 050-7722 Rev C 02/2017 Mounting Torque (TO-247 Package), 6-32 or M3 screw °C 260 10 in·lbf 1.1 N·m 1 PRELIMINARY APT5SM170B STATIC CHARACTERISTICS Symbol Parameter Test Conditions Min 1700 V(BR)DSS Drain-Source Breakdown Voltage VGS = 0V, ID = 100μA RDS(on) Drain-Source On Resistance 2 VGS = 20V, ID = 2.5A VGS(th) Gate-Source Threshold Voltage ∆VGS(th)/∆TJ Threshold Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current VGS = VDS, ID = 0.5mA VDS = 1700V VGS = 0V 1.8 Typ Max Unit 950 1250 mΩ V 3.2 V -7.6 mV/°C TJ = 25°C 100 TJ = 150°C 250 VGS = +20V / -10V ±100 µA nA TJ = 25°C unless otherwise specified DYNAMIC CHARACTERISTICS Symbol Parameter Test Conditions Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Min Typ 3 f = 1MHz Total Gate Charge VGS = 0/20V 21 Gate-Source Charge VDS= 850V 5 Qgd Gate-Drain Charge ID = 2.5A 8 td(on) Turn-On Delay Time tf Current Fall Time Eon2 Turn-On Switching Energy 4 Eoff Turn-Off Switching Energy td(on) Turn-On Delay Time tr Turn-On Switching Energy Eoff Turn-Off Switching Energy ESR 4 Equivalent Series Resistance Source-Drain Diode Characteristics Symbol RG = 2.5Ω 3 4 L = 115 µH 82 Tc = 25°C ns µJ 37 3 2 ns 8 ID = 2.5A Current Fall Time Eon2 7 VGS = 0/20V Turn-Off Delay Time tf ID = 2.5A VDS = 850V Current Rise Time td(off) 2 VGS = 0/20V Turn-Off Delay Time nC 4 VDS = 850V Current Rise Time pF 15 Qg tr Unit 249 VGS = 0V, VGS = 1000V Qgs td(off) Max RG = 2.5 Ω 3 5 L = 115 µH 87 Tc = 150°C µJ 39 f = 1MHz, 25mV, Drain Short 1.43 Ω Parameter VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Irrm Reverse Recovery Current Test Conditions ISD = 2.5A, VGS = 0V ISD = 2.5A, VDD = 850V dI/dt = -1000A/µs Min Typ Max Unit 4 V 14 ns 24 nC 3.6 A TJ = 25°C unless otherwise specified 1 2 3 4 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature Pulse test: Pulse Width < 380µs, duty cycle < 2%. RG is total external gate resistance not including internal gate driver impedance. Eon2 includes energy of free wheeling diode. 050-7722 Rev C 02/2017 2 PRELIMINARY APT5SM170B 10 10 V = 20V 9 TJ= 25°C J 7 6 TJ= 125°C 5 TJ= 150°C 4 TJ= 175°C 3 2 16V 7 6 5 14V 4 3 12V 2 10V 1 1 0 0 5 10 15 20 0 25 8V 0 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 1, Output Characteristics J 15 20 25 T = 175°C J 9 8 8 14V 20V 6 18V 5 12V 16V 4 10V 3 2 8V 1 6V 0 5 10 15 20 4 10V 3 2 8V 1 6V 0 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 −50 −25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) Figure 5, RDS(on) vs Junction Temperature 050-7722 Rev C 02/2017 10 20 VGS, GATE-TO-SOURCE VOLTAGE (V) 1.8 5 15 20 25 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 4, Output Characteristics 2.2 NORMALIZED TO T = 25°C J VGS = 20V @ 2.5A 12V 5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 3, Output Characteristics 2 14V 18V 16V 6 0 25 20V 7 QGD 15 IGS= 1mA IDS= 2.5A VDS= 850V QGS VDS VGS 10 5 QG 0 0 850 800 750 700 650 600 550 500 450 400 350 300 250 200 150 100 50 0 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 7 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 10 10 T = 150°C 9 RDS(on), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED TO 25°C) 5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics 10 0 18V 8 TJ= 75°C ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 8 20V T = 25°C 9 GS 3 6 9 12 15 18 21 QG, GATE CHARGE (nC) Figure 6, Gate Charge Characteristics 3 PRELIMINARY APT5SM170B 10 1000 9 ID ,DRAIN CURRENT (A) C, CAPACITANCE (pF) Ciss 100 Coss 10 Crss 8 7 6 5 TJ= 175°C TJ= 150°C TJ= 125°C 4 3 TJ= 100°C TJ= 75°C 2 f = 1MHz VGS = 0V 1 1 10 100 0 1000 1700 -3 VGS -2 VGS −2 -1 VGS 0 VGS −3 −4 8 10 12 14 16 18 20 -5 VGS -4 VGS -3 VGS −2 -2 VGS -1 VGS −3 0 VGS −4 −5 -5 −4 −3 −2 −1 0 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Reverse Drain Current vs Drain-to-Source Voltage Third Quadrant Conduction 0 -4 VGS −1 -3 VGS -2 VGS -1 VGS 0 VGS −4 −5 −4 −3 −2 −1 0 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 11, Reverse Drain Current vs Drain-to-Source Voltage Third Quadrant Conduction (NORMALIZED TO 25°C) -5 VGS J VGS(th), THRESHOLD VOLTAGE (V) 2.0 T = 150°C IDS, REVERSE DRAIN CURRENT (A) 6 −1 −5 -4 -3 -2 -1 0 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Reverse Drain Current vs Drain-to-Source Voltage Third Quadrant Conduction 050-7722 Rev C 02/2017 4 J -4 VGS −1 −5 2 T = 125°C -5 VGS J IDS, REVERSE DRAIN CURRENT (A) IDS, REVERSE DRAIN CURRENT (A) T = 25°C −3 0 0 0 −2 TJ= 25°C VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 8, Output Characteristics ID vs VGS Temperature VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 7, Capacitance vs Drain-to-Source Voltage −5 TJ= 50°C 1 I = 1mA 1.8 D 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) Figure 12, Threshold Voltage vs Temperature 4 PRELIMINARY APT5SM170B ID, DRAIN CURRENT (A) 10 1 RDS(on) 10µs 100µs 1ms 0.1 10ms 100ms/DC T = 175°C J T = 100°C C 0.01 1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 13, Forward Safe Operating Area D = 0.9 2.0 0.7 1.5 0.5 1.0 Note: t1 0.3 P DM ZθJC, THERMAL IMPEDANCE (°C/W) 2.5 0.1 Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C t2 0.5 0.05 0 10 -5 t SINGLE PULSE 10-4 10-2 10-3 0.1 1 RECTANGULAR PULSE DURATION (SECONDS) Figure 14, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration TO-247 (B) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Drai n 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.21 (.087) 2.59 (.102) 19.81 (.780) 20.32 (.800) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) Gate Drai n Source 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters (Inches) 050-7722 Rev C 02/2017 5 PRELIMINARY Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. 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Products include high-performance and radiation-hardened analog mixedsignal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world’s standard for time; voice processing devices; RF solutions; discrete components; security technologies and scalable anti-tamper products; Ethernet Solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 4,800 employees globally. Learn more at www.microsemi.com. Microsemi Corporate Headquarters One Enterprise, Aliso Viejo, CA 92656 USA Within the USA: +1 (800) 713-4113 Outside the USA: +1 (949) 380-6100 Sales: +1 (949) 380-6136 Fax: +1 (949) 215-4996 email: sales.support@microsemi.com www.microsemi.com 050-7722 Rev C 02/2017 ©2017 Microsemi Corporation. All rights reserved. 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