APT6010JLL
600V 47A 0.100Ω
S G D S
POWER MOS 7
®
R
MOSFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with MIcrosemi's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
SO
2 T-
27
"UL Recongnized"
file # 145592
ISOTOP fi
• Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package
D G S
All Ratings: TC = 25°C unless otherwise specified.
APT6010JLL UNIT Volts Amps
600 47 188 ±30 ±40 520 4.16 -55 to 150 300 47 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
600 0.100 100 500 ±100 3 5
(VGS = 10V, ID = 23.5A)
Ohms µA nA Volts
6-2006 050-7052 Rev E
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT6010JLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 47A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 300V ID = 47A @ 25°C RG = 0.6Ω 6 INDUCTIVE SWITCHING @ 25°C VDD = 400V, VGS = 15V ID = 47A, RG = 5Ω 6 INDUCTIVE SWITCHING @ 125°C VDD = 400V VGS = 15V ID = 47A, RG = 5Ω
MIN
TYP
MAX
UNIT
6710 1250 90 150 30 75 12 17 34 10 770 845 1000 1060
MIN TYP MAX UNIT Amps Volts ns µC nC pF
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
ns
µJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
47 188 1.3 790 17.9 8
MIN TYP MAX
(Body Diode) (VGS = 0V, IS = - 47A)
Reverse Recovery Time (IS = -47A, dl S /dt = 100A/µs) Reverse Recovery Charge (IS = -47A, dl S/dt = 100A/µs) Peak Diode Recovery Characteristic Junction to Case RMS Volatage (50-60hHZ Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
d v/ dt 5
V/ns
THERMAL CHARACTERISTICS
Symbol RθJC VIsolation UNIT °C/W Volts
0.24 2500
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 2.72mH, RG = 25Ω, Peak IL = 47A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID47A di/dt ≤ 700A/µs VR ≤ 600V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20.
Microsemi reserves the right to change, without notice, the specifications and inforation contained herein.
0.25
Z JC, THERMAL IMPEDANCE (°C/W) θ
D = 0.9 0.20 0.7 0.15 0.5 0.10 0.3 0.05 0.1 0 0.05 10-5 10-4 SINGLE PULSE Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC
050-7052 Rev E
6-2006
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
ID, DRAIN CURRENT (AMPERES)
140 120 100 80 60
APT6010JLL
VGS=15 &10V 8V 7.5V
TJ ( C)
0.0528 Dissipated Power (Watts) 0.0203 0.173 0.490 0.0651
TC ( C)
0.123
7V
ZEXT
6.5V 40 20 0 6V 5.5V
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 160
ID, DRAIN CURRENT (AMPERES)
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
V
GS
140 120 100 80 60 40 20 0
VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @
很抱歉,暂时无法提供与“APT6010JLL”相匹配的价格&库存,您可以联系我们找货
免费人工找货