APT60GF60JU3

APT60GF60JU3 ISOTOP® Buck chopper NPT IGBT C VCES = 600V IC = 60A @ Tc = 95°C Applicatio n • AC and DC motor control • Switched Mode Power Supplies Features • Non Punch Through (NPT) THUNDERBOLT IGBT ® G E A E G C A • • • - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated ISOTOP® Package (SOT-227) Very low stray inductance High level of integration ISOTOP Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC o f VCEsat • RoHS Compliant Absolute maximum ratings Symbol VCES IC1 IC2 ICM VGE PD ILM IFA V IFRMS Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA clamped Inductive load Current R G=11 Ω Maximum Average Forward Current Duty cycle=0.5 RMS Forward Current (Square wave, 50% duty) TC = 25°C TC = 95°C TC = 25°C TC = 25°C TC = 25°C TC = 80°C 360 30 39 A A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. www.microsemi.com 1-8 APT60GF60JU3 – Rev 1 June, 2006 Max ratings 600 93 60 360 ±20 378 Unit V A V W APT60GF60JU3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic B VCES Collector - Emitter Breakdown Voltage ICES VCE(on) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0 V, IC = 0.5mA Tj = 25°C VGE = 0 V VCE = 600V Tj = 125°C Tj = 25°C VGE =15V IC = 60A Tj = 125°C VGE = VCE, IC = 500µA VGE = ±20V, VCE = 0 V Min 600 Typ Max 80 2000 2.5 2.8 5 ±100 Unit V µA V V nA 2.0 3 4 Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Ets Td(on) Tr Td(off) Tf Eon Eoff Ets Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total switching Losses Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Total switching Losses Test Conditions VGE = 0 V VCE = 25V f = 1MHz VGS = 15V VBus = 300V IC = 60A Resistive Switching (25°C) VGE = 15V VBus = 300V IC = 60A R G = 5Ω Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 60A R G = 5Ω Inductive Switching (150°C) VGE = 15V VBus = 400V IC = 60A R G = 5Ω Min Typ 3125 310 180 257 19 120 20 95 315 245 26 63 395 68 3.4 25 59 430 65 1.6 2.4 4.0 Max 3590 450 310 410 30 180 40 190 470 490 50 125 590 140 7 50 120 650 130 3.2 4.8 8.0 Unit pF nC ns ns mJ ns mJ www.microsemi.com 2-8 APT60GF60JU3 – Rev 1 June, 2006 APT60GF60JU3 Chopper ciode ratings and characteristics Symbol VF IRM CT trr Reverse Recovery Time IRRM Qrr trr Qrr IRRM Maximum Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 30A VR = 400V di/dt =1000A/µs IF = 30A VR = 400V di/dt =200A/µs Characteristic Diode Forward Voltage Maximum Reverse Leakage Current Junction Capacitance Reverse Recovery Time Test Conditions IF = 30A IF = 60A IF = 30A VR = 600V VR = 600V VR = 200V IF=1A,VR=30V di/dt =100A/µs Min Typ 1.6 1.9 1.4 44 Tj = 25°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C 23 85 160 4 8 130 700 70 1300 30 ns Max 1.8 250 500 Unit V µA pF Tj = 125°C Tj = 25°C Tj = 125°C A nC ns nC A Thermal and package characteristics Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt Characteristic Junction to Case Junction to Ambient (IGBT & Diode) RMS Isolation Voltage, any terminal to case t =1 min, I isol