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APT60S20B

APT60S20B

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    APT60S20B - HIGH VOLTAGE SCHOTTKY DIODE - Microsemi Corporation

  • 数据手册
  • 价格&库存
APT60S20B 数据手册
1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode 1 2 D3PAK APT60S20B APT60S20S 200V 200V 75A 75A 1 2 HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS • Parallel Diode • • • • • -Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters Snubber Diode Uninterruptible Power Supply (UPS) 48 Volt Output Rectifiers High Speed Rectifiers PRODUCT FEATURES • Ultrafast Recovery Times • Soft Recovery Characteristics • Popular TO-247 Package or • Low Forward Voltage Surface Mount D3PAK Package PRODUCT BENEFITS • Low Losses • Low Noise Switching • Cooler Operation • Higher Reliability Systems • Increased System Power Density • High Blocking Voltage • Low Leakage Current MAXIMUM RATINGS Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM TJ,TSTG TL EVAL Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage All Ratings: TC = 25°C unless otherwise specified. APT60S20B_S UNIT 200 Volts Maximum Average Forward Current (TC = 123°C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) Operating and StorageTemperature Range Lead Temperature for 10 Sec. Avalanche Energy (2A, 30mH) 75 208 600 -55 to 150 300 60 °C mJ Amps STATIC ELECTRICAL CHARACTERISTICS Symbol IF = 60A VF Forward Voltage IF = 120A IF = 60A, TJ = 125°C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V VR = 200V VR = 200V, TJ = 125°C MIN TYP MAX UNIT .83 .98 .72 .90 Volts 1 25 300 Microsemi Website - http://www.microsemi.com 053-6042 Rev D pF 7-2006 mA DYNAMIC CHARACTERISTICS Symbol trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 60A, diF/dt = -700A/µs VR = 133V, TC = 125°C IF = 60A, diF/dt = -200A/µs VR = 133V, TC = 125°C Test Conditions IF = 60A, diF/dt = -200A/µs VR = 133V, TC = 25°C MIN TYP APT60S20B_S MAX UNIT ns nC 55 160 5 100 490 10 80 1100 27 - - Amps ns nC Amps ns nC Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC RθJA WT Characteristic / Test Conditions Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance Package Weight MIN TYP MAX UNIT °C/W oz g .30 40 0.22 5.9 10 1.1 Torque Maximum Mounting Torque lb•in N•m Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.35 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.30 0.25 D = 0.9 0.7 0.20 0.15 0.10 0.05 0 0.5 0.3 0.1 0.05 10-5 10-4 SINGLE PULSE Note: PDM t1 t2 Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t2 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION TJ ( C) 0.0218 Dissipated Power (Watts) 0.00450 0.0119 0.121 0.119 TC ( C) 0.160 053-6042 Rev D 7-2006 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL ZEXT TYPICAL PERFORMANCE CURVES 200 180 IF, FORWARD CURRENT (A) trr, REVERSE RECOVERY TIME (ns) 120 100 80 60 40 20 0 APT60S20B_S TJ = 125°C VR = 133V TJ = -55°C TJ = 25°C 120A 60A 160 140 120 100 80 60 40 20 0 0 TJ = 125°C TJ = 150°C 30A 0.2 0.4 0.6 0.8 1 1.2 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage TJ = 125°C VR = 133V 0 200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 3. Reverse Recovery Time vs. Current Rate of Change 35 IRRM, REVERSE RECOVERY CURRENT (A) TJ = 125°C VR = 133V 1800 Qrr, REVERSE RECOVERY CHARGE (nC) 1600 1400 1200 1000 800 600 400 200 0 120A 30 25 20 15 10 5 0 120A 60A 60A 30A 30A 0 200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.2 1.0 0.8 0.6 0.4 0.2 0.0 IRRM trr Qrr Qrr 0 200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 250 Duty cycle = 0.5 TJ = 150°C Kf, DYNAMIC PARAMETERS (Normalized to 700A/µs) 200 trr IF(AV) (A) 150 100 50 Lead Temperature Limited 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 3500 CJ, JUNCTION CAPACITANCE (pF) 0 50 75 100 125 150 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 100 50 0 25 2500 2000 1500 1000 50 0 PEAK AVALANCHE CURRENT (A) 3000 10 7-2006 5 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 1 1 1 10 100 1000 2200 Time in Avalanche (µs) Figure 9. Single Pulse UIS SOA 053-6042 Rev D APT60S20B_S Vr +18V 0V D.U.T. 30µH trr/Qrr Waveform diF /dt Adjust APT20M36BLL PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 2 3 4 IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero 1 4 5 3 2 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. 0.25 IRRM 5 Figure 10, Diode Reverse Recovery Waveform and Definitions TO-247 Package Outline Cathode (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) D PAK Package Outline 4.90 (.193) 5.10 (.201) 1.45 (.057) 1.60 (.063) 15.85 (.624) 16.05 (.632) 1.00 (.039) 1.15 (.045) 13.30 (.524) 13.60 (.535) 3 Cathode 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) 18.70 (.736) 19.10 (.752) 0.40 (.016) 0.65 (.026) 12.40 (.488) 12.70 (.500) 4.50 (.177) Max. 7-2006 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 0.020 (.001) 0.250 (.010) 2.70 (.106) 2.90 (.114) 1.15 (.045) 1.45 (.057) 1.20 (.047) 1.90 (.075) 1.40 (.055) 2.10 (.083) 5.45 (.215) BSC (2 Plcs.) 2.40 (.094) 2.70 (.106) (Base of Lead) 053-6042 Rev D Anode 2.21 (.087) 2.59 (.102) Heat Sink (Cathode) and Leads are Plated Cathode 10.90 (.430) BSC Dimensions in Millimeters and (Inches) Anode Cathode Dimensions in Millimeters (Inches) Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
APT60S20B 价格&库存

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