APT60S20B2CT

1 2 3 TMa x 1 - Anode 1 2 - Common Cathode Back of Case - Cathode 3 - Anode 2 1 2 3 APT60S20B2CT 200V 2X75A HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS • Parallel Diode • • • • • -Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters Snubber Diode Uninterruptible Power Supply (UPS) 48 Volt Output Rectifiers High Speed Rectifiers PRODUCT FEATURES • Ultrafast Recovery Times • Soft Recovery Characteristics • Popular T-MAX™ Package • Low Forward Voltage • High Blocking Voltage • Low Leakage Current PRODUCT BENEFITS • Low Losses • Low Noise Switching • Cooler Operation • Higher Reliability Systems • Increased System Power Density MAXIMUM RATINGS Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM TJ,TSTG TL EVAL Characteristic / Test Conditions Maximum D.C. Reverse Voltage All Ratings Are Per Leg: TC = 25°C unless otherwise specified. APT60S20B2CT UNIT Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward Current (TC = 123°C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) Operating and StorageTemperature Range Lead Temperature for 10 Sec. Avalanche Energy (2A, 30mH) 200 Volts 75 208 600 -55 to 150 300 60 °C mJ Amps STATIC ELECTRICAL CHARACTERISTICS Symbol IF = 60A VF Forward Voltage IF = 120A IF = 60A, TJ = 125°C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V VR = 200V VR = 200V, TJ = 125°C MIN TYP MAX UNIT .83 .98 .72 .90 Volts 1 25 300 Microsemi Website - http://www.microsemi.com 053-6043 Rev C pF 7-2006 mA DYNAMIC CHARACTERISTICS Symbol trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 60A, diF/dt = -700A/µs VR = 133V, TC = 125°C IF = 60A, diF/dt = -200A/µs VR = 133V, TC = 125°C Test Conditions IF = 60A, diF/dt = -200A/µs VR = 133V, TC = 25°C MIN TYP APT60S20B2CT MAX UNIT ns nC 55 160 5 100 490 10 80 1100 27 - - Amps ns nC Amps ns nC Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC RθJA WT Characteristic / Test Conditions Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance Package Weight MIN TYP MAX UNIT °C/W oz g .30 40 0.22 5.9 Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.35 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.30 0.25 D = 0.9 0.7 0.20 0.15 0.10 0.05 0 0.5 0.3 0.1 0.05 10-5 10-4 SINGLE PULSE Note: PDM t1 t2 Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t2 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION TJ ( C) TC ( C) 0.0218 0.119 0.160 7-2006 Dissipated Power (Watts) 0.00450 0.0119 0.121 053-6043 Rev C ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL ZEXT TYPICAL PERFORMANCE CURVES 200 180 IF, FORWARD CURRENT (A) trr, REVERSE RECOVERY TIME (ns) 120 100 80 60 40 20 0 APT60S20B2CT TJ = 125°C VR = 133V TJ = -55°C TJ = 25°C 120A 60A 160 140 120 100 80 60 40 20 0 0 TJ = 125°C TJ = 150°C 30A 0.2 0.4 0.6 0.8 1 1.2 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage IRRM, REVERSE RECOVERY CURRENT (A) TJ = 125°C VR = 133V 0 200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 3. Reverse Recovery Time vs. Current Rate of Change 35 30 25 20 60A 15 10 5 0 30A TJ = 125°C VR = 133V 1800 Qrr, REVERSE RECOVERY CHARGE (nC) 1600 1400 1200 1000 800 600 400 200 0 0 120A 120A 60A 30A 200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.2 1.0 0.8 0.6 0.4 0.2 0.0 I RRM t rr Qrr Qrr 0 200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 250 Duty cycle = 0.5 TJ = 150°C Kf, DYNAMIC PARAMETERS (Normalized to 700A/µs) 200 t rr IF(AV) (A) 150 100 50 Lead Temperature Limited 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 3500 3000 2500 2000 1500 1000 50 0 0 75 100 125 150 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 100 50 0 25 50 CJ, JUNCTION CAPACITANCE (pF) PEAK AVALANCHE CURRENT (A) 10 7-2006 5 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 1 1 1 10 100 1000 2200 Time in Avalanche (µs) Figure 9. Single Pulse UIS SOA 053-6043 Rev C APT60S20B2CT Vr +18V 0V D.U.T. 30µH trr/Qrr Waveform diF /dt Adjust APT20M36BLL PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 2 3 4 IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero 1 4 5 3 2 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. 0.25 IRRM 5 Figure 10, Diode Reverse Recovery Waveform and Definitions T-MAXTM (B2) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Common Cathode 20.80 (.819) 21.46 (.845) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 7-2006 Anode 1 Common Cathode Anode 2 053-6043 Rev C 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.