APT75DL60B

APT75DL60B(G) APT75DL60S(G) 600V 75A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode (B) TO - 24 PRODUCT APPLICATIONS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Applications - Induction Heating • Resonant Mode Circuits -ZVS and ZCS Topologies - Phase Shifted Bridge PRODUCT FEATURES • Ultrasoft Recovery Times (trr) • Popular TO-247 Package or Surface Mount D3PAK Package • Ultra Low Forward Voltage • Low Leakage Current PRODUCT BENEFITS • Soft Switching - High Qrr • Low Noise Switching - Reduced Ringing • Higher Reliability Systems • Minimizes or eliminates snubber 1 2 7 D3PAK 1 2 (S) 1 2 1 - Cathode 2 - Anode Back of Case - Cathode MAXIMUM RATINGS Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM TJ, TSTG TL All Ratings: TC = 25°C unless otherwise specified. Ratings Unit Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward current (TC = 112°C, Duty Cycle = 0.5) RMS Forward Currrent (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3 ms) Operating and Storage Junction Temperature Range Lead Temperature for 10 Seconds 600 Volts 75 121 320 -55 to 175 °C 300 Amps STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions IF = 75A VF Forward Voltage IF = 150A IF = 75A, TJ = 125°C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V VR = 600V VR = 600V, TJ = 125°C 69 Min Typ 1.25 2.0 1.25 Max 1.6 Unit Volts 25 250 pF 052-6317 Rev B 6 - 2009 μA Microsemi Website - http://www.microsemi.com DYNAMIC CHARACTERISTICS Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM APT75DL60B_S(G) Min Typ 56 ns 460 IF = 75A, diF/dt = -200A/μs VR = 400V, TC = 25°C 2174 11 597 IF = 75A, diF/dt = -200A/μs VR = 400V, TC = 125°C 4326 15 355 IF = 75A, diF/dt = -1000A/μs VR = 400V, TC = 125°C 7215 42 nC Amps ns nC Amps ns nC Amps Characteristic / Test Conditions Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C Max Unit THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC WT Characteristic / Test Conditions Junction-to-Case Thermal Resistance Min Typ Max 0.40 Unit °C/W oz g 0.22 Package Weight 5.9 10 Torque Maximum Mounting Torque 1.1 Microsemi reserves the right to change, without notice, the specifications and information contained herein. lb·in N·m 0.45 ZθJC, THERMAL IMPEDANCE (°C/W) 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 10-5 10-4 10-3 10-2 10-1 Note: PDM t1 t2 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC t 1.0 10 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 052-6317 Rev B 6 - 2009 TYPICAL PERFORMANCE CURVES 160 140 IF, FORWARD CURRENT (A) 120 100 80 60 40 20 0 0 1 2 3 TJ= 125°C trr, COLLECTOR CURRENT (A) TJ= 55°C TJ= 25°C TJ= 150°C 800 150A 700 600 500 400 300 200 100 0 0 200 400 600 75A 37.5A APT75DL60B_S(G) T = 125°C J V = 400V R 800 1000 Qrr, REVERSE RECOVERY CHARGE (nC) IRRM, REVERSE RECOVERY CURRENT (A) VF, ANODE-TO-CATHODE VOLTAGE (V) FIGURE 2, Forward Current vs. Forward Voltage 10000 T = 125°C 150A J V = 400V 9000 R 8000 7000 6000 5000 4000 3000 2000 1000 0 0 200 400 600 800 1000 37.5A 75A -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 3, Reverse Recovery Time vs. Current Rate of Change 50 45 40 35 30 25 20 15 10 5 0 37.5A 75A T = 125°C J V = 400V R 150A -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change 1.2 1.0 0.8 0.6 0.4 0.2 0 IRRM 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 5, Reverse Recovery Current vs. Current Rate of Change 160 140 120 100 80 60 40 20 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/μs) QRR IF(AV) (A) tRR 0 25 50 75 100 125 150 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) FIGURE 6, Dynamic Parameters vs Junction Temperature 700 CJ, JUNCTION CAPACITANCE (pF) Case Temperature (°C) FIGURE 7, Maximum Average Forward Current vs. Case Temperature 600 500 400 052-6317 Rev B 6 - 2009 300 200 100 0 10 100 400 VR, REVERSE VOLTAGE (V) FIGURE 8, Junction Capacitance vs. Reverse Voltage 1 Vr +18V 0V D.U.T. diF /dt Adjust APT75DL60B_S(G) trr/Qrr Waveform CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 2 3 4 IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero 1 4 6 5 3 2 0.25 IRRM Slope = diM/dt trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr. 5 6 Figure 10, Diode Reverse Recovery Waveform and Definitions TO-247 Package Outline e1 SAC: Tin, Silver, Copper 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) D PAK Package Outline e1 100% Sn 4.90 (.193) 5.10 (.201) 1.45 (.057) 1.60 (.063) 15.85 (.624) 16.05(.632) 13.30 (.524) 13.60(.535) 3 Cathode (Heat Sink) 1.00 (.039) 1.15(.045) Cathode 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) 18.70 (.736) 19.10 (.752) 12.40 (.488) 12.70 (.500) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 0.40 (.016) 0.65 (.026) 0.020 (.001) 0.250 (.010) 2.70 (.106) 2.90 (.114) 19.81 (.780) 20.32 (.800) 1.15 (.045) 1.45 (.057) 1.20 (.047) 1.90 (.075) 1.40 (.055) 2.10 (.083) 5.45 (.215) BSC (2 Plcs.) 2.40 (.094) 2.70 (.106) (Base of Lead) 052-6317 Rev B 6 - 2009 Anode 2.21 (.087) 2.59 (.102) Heat Sink (Cathode) and Leads are Plated Cathode 10.90 (.430) BSC Dimensions in Millimeters and (Inches) Anode Cathode Dimensions in Millimeters (Inches) Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.